A2C25S12M3-F

A2C25S12M3-F
Mfr. #:
A2C25S12M3-F
Fabricante:
STMicroelectronics
Descripción:
IGBT TRENCH 1200V 25A ACEPACK2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2C25S12M3-F Ficha de datos
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Más información:
A2C25S12M3-F más información A2C25S12M3-F Product Details
Atributo del producto
Valor de atributo
Tags
A2C25, A2C2, A2C
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
A2C25S12M3-F Series 1200 V 25 A Trench Gate Field-Stop IGBT - ACEPACK™ 2
***ical
Trans IGBT Module N-CH 1200V 25A 197000mW 35-Pin ACEPACK-2 Frame
***ark
Acepack Power Modules Rohs Compliant: Yes
***i-Key
IGBT TRENCH 1200V 25A ACEPACK2
***ronik
CIB 1200V 25A ACEPACK2
***et Europe
PTD HIGH VOLTAGE
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:197W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:ACEPACK 2 M Series; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, MODULO, CA-N, 1.2KV, 25A; Polarità Transistor:Canale N; Corrente di Collettore CC:25A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:197W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ACEPACK 2 M Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
ACEPACK™ IGBT Modules
STMicroelectronics​ ACEPACK™ IGBT Modules are a family of new plastic power modules developed to address power management solutions and industrial applications. The ACEPACK™ 1 and ACEPACK™ 2 packages are introduced with both Converter Inverter Brake (CIB) and six-pack topologies that integrate the advanced trench-gate field-stop technologies. These ACEPACK IGBT-modules feature ACEPACK 1 or ACEPACK 2 power modules, integrated Negative Temperature Coefficient (NTC), and CIB or six-pack topology. These modules cover the appropriate use of the new IGBT-technology by representing the best compromise between conduction and switching-loss to maximize efficiency by 20kHz. These IGBT modules are ideal for application in industrial motor drives, solar panels, welding, and inverters.Learn More
Parte # Mfg. Descripción Valores Precio
A2C25S12M3-F
DISTI # V99:2348_19042936
STMicroelectronicsA2C25S12M3-F14
  • 250:$40.1599
  • 100:$41.1800
  • 25:$46.2900
  • 10:$48.3100
  • 5:$50.6100
  • 1:$51.7400
A2C25S12M3-F
DISTI # V36:1790_19103896
STMicroelectronicsA2C25S12M3-F0
  • 18000:$33.7800
  • 9000:$33.7900
  • 1800:$36.8500
  • 180:$44.6300
  • 18:$46.0900
A2C25S12M3-F
DISTI # 497-17743-ND
STMicroelectronicsIGBT TRENCH 1200V 25A ACEPACK2
RoHS: Not compliant
Min Qty: 1
Container: Tray
14In Stock
  • 108:$44.1525
  • 36:$48.7200
  • 18:$50.8517
  • 1:$54.5100
A2C25S12M3-F
DISTI # 26553366
STMicroelectronicsA2C25S12M3-F14
  • 250:$40.1599
  • 100:$41.1800
  • 25:$46.2900
  • 10:$48.3100
  • 5:$50.6100
  • 1:$51.7400
A2C25S12M3-F
DISTI # A2C25S12M3-F
STMicroelectronicsPTD HIGH VOLTAGE (Alt: A2C25S12M3-F)
RoHS: Compliant
Min Qty: 1
Europe - 36
  • 1000:€36.4900
  • 500:€37.1900
  • 100:€37.9900
  • 50:€38.5900
  • 25:€39.5900
  • 10:€41.7900
  • 1:€42.3900
A2C25S12M3-F
DISTI # A2C25S12M3-F
STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: A2C25S12M3-F)
RoHS: Compliant
Min Qty: 14
Container: Tray
Americas - 14
  • 140:$35.7900
  • 70:$36.6900
  • 42:$37.5900
  • 28:$38.5900
  • 14:$39.6900
A2C25S12M3-F
DISTI # 47AC8731
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A,Transistor Polarity:N Channel,DC Collector Current:25A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:197W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes15
  • 100:$42.4700
  • 50:$44.6700
  • 25:$46.8600
  • 10:$48.9200
  • 5:$51.2700
  • 1:$52.4300
A2C25S12M3-F.
DISTI # 95AC8074
STMicroelectronicsACEPACK POWER MODULES ROHS COMPLIANT: YES14
  • 100:$42.4700
  • 50:$44.6700
  • 25:$46.8600
  • 10:$48.9200
  • 5:$51.2700
  • 1:$52.4300
A2C25S12M3-F
DISTI # 511-A2C25S12M3-F
STMicroelectronicsIGBT Modules PTD HIGH VOLTAGE
RoHS: Compliant
14
  • 1:$51.9100
  • 5:$50.7600
  • 10:$48.4400
  • 25:$46.4000
  • 100:$42.0500
A2C25S12M3-F
DISTI # 2832456
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A
RoHS: Compliant
15
  • 108:$66.5400
  • 36:$73.4300
  • 18:$76.6400
  • 1:$82.1500
A2C25S12M3-F
DISTI # 2832456
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 25A15
  • 50:£32.5700
  • 10:£35.4000
  • 5:£38.7300
  • 1:£39.6000
A2C25S12M3-F
DISTI # XSKDRABV0045861
STMicroelectronicsDifferential Multiplexer, 1 Func, 4 Channel,CMOS,PQCC16
RoHS: Compliant
22 in Stock0 on Order
  • 22:$55.6000
  • 14:$59.5700
Imagen Parte # Descripción
A2C25S12M3

Mfr.#: A2C25S12M3

OMO.#: OMO-A2C25S12M3

IGBT Modules PTD HIGH VOLTAGE
A2C25S12M3-F

Mfr.#: A2C25S12M3-F

OMO.#: OMO-A2C25S12M3-F

IGBT Modules PTD HIGH VOLTAGE
A2C25S12M3-F

Mfr.#: A2C25S12M3-F

OMO.#: OMO-A2C25S12M3-F-STMICROELECTRONICS

IGBT TRENCH 1200V 25A ACEPACK2
A2C25S12M3

Mfr.#: A2C25S12M3

OMO.#: OMO-A2C25S12M3-STMICROELECTRONICS

IGBT TRENCH 1200V 25A ACEPACK2
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de A2C25S12M3-F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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