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IXTQ44N50P

IXTQ44N50P
Mfr. #:
IXTQ44N50P
Fabricante:
Littelfuse
Descripción:
MOSFET 44 Amps 500V 0.14 Ohm Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTQ44N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTQ44N50P DatasheetIXTQ44N50P Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3P-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
44 A
Rds On - Resistencia de la fuente de drenaje:
140 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
650 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
20.3 mm
Longitud:
15.8 mm
Serie:
IXTQ44N50
Tipo de transistor:
1 N-Channel
Ancho:
4.9 mm
Marca:
IXYS
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
75 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.194007 oz
Tags
IXTQ44, IXTQ4, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 500V 44A TO-3P
***el Nordic
Contact for details
***nell
MOSFET, N, TO-3P; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:44A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; N-channel Gate Charge:98nC; No. of Pins:3; Power, Pd:650W; Thermal Resistance, Junction to Case A:0.19°C/W; Typ Capacitance Ciss:5440pF; Voltage, Vds Max:500V; Time, trr Max:400ns
***emi
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
*** Source Electronics
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
***nell
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
***emi
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
***eco
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247
***ure Electronics
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***p One Stop
Trans MOSFET N-CH 560V 32A 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:560V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:284W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:32A; Current Id Max:32A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:284W; Power Dissipation Pd:284W; Power Dissipation Ptot Max:284W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds:560V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***p One Stop Global
Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
IC SUPERVISOR 2 CHANNEL SOT23-5
***S
French Electronic Distributor since 1988
Parte # Mfg. Descripción Valores Precio
IXTQ44N50P
DISTI # IXTQ44N50P-ND		IXYS CorporationMOSFET N-CH 500V 44A TO-3P
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$7.8700
IXTQ44N50P
DISTI # 747-IXTQ44N50P		IXYS CorporationMOSFET 44 Amps 500V 0.14 Ohm Rds
RoHS: Compliant		35
  • 1:$10.0300
  • 10:$9.0300
  • 25:$7.5100
  • 50:$6.9800
  • 100:$6.8200
  • 250:$6.2300
  • 500:$5.6800
  • 1000:$5.4200
Imagen Parte # Descripción
IXTQ44N50P

Mfr.#: IXTQ44N50P

OMO.#: OMO-IXTQ44N50P

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Mfr.#: IXTQ480P2

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IXTQ450P2

Mfr.#: IXTQ450P2

OMO.#: OMO-IXTQ450P2

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IXTQ48N20T

Mfr.#: IXTQ48N20T

OMO.#: OMO-IXTQ48N20T

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IXTQ44P15T

Mfr.#: IXTQ44P15T

OMO.#: OMO-IXTQ44P15T

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IXTQ450P2-ND

Mfr.#: IXTQ450P2-ND

OMO.#: OMO-IXTQ450P2-ND-1190

 Nuevo y original
IXTQ40N50Q

Mfr.#: IXTQ40N50Q

OMO.#: OMO-IXTQ40N50Q-IXYS-CORPORATION

 MOSFET N-CH 500V 40A TO-3P
IXTQ44N50P

Mfr.#: IXTQ44N50P

OMO.#: OMO-IXTQ44N50P-IXYS-CORPORATION

 Darlington Transistors MOSFET 44 Amps 500V 0.14 Ohm Rds
IXTQ480P2

Mfr.#: IXTQ480P2

OMO.#: OMO-IXTQ480P2-IXYS-CORPORATION

 Darlington Transistors MOSFET PolarP2 Power MOSFET
IXTQ470P2

Mfr.#: IXTQ470P2

OMO.#: OMO-IXTQ470P2-IXYS-CORPORATION

 IGBT Transistors MOSFET PolarP2 Power MOSFET
Disponibilidad
Valores:
35
En orden:
2018
Ingrese la cantidad:
El precio actual de IXTQ44N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,03 US$
10,03 US$
10
9,03 US$
90,30 US$
25
7,51 US$
187,75 US$
50
6,98 US$
349,00 US$
100
6,82 US$
682,00 US$
250
6,23 US$
1 557,50 US$
500
5,68 US$
2 840,00 US$
1000
5,42 US$
5 420,00 US$
2500
4,64 US$
11 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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