DXTN3C60PSQ-13

DXTN3C60PSQ-13
Mfr. #:
DXTN3C60PSQ-13
Fabricante:
Diodes Incorporated
Descripción:
Bipolar Transistors - BJT 60V NPN Medium Pwr Low Sat Transistor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DXTN3C60PSQ-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerDI5060-8
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
60 V
Colector- Voltaje base VCBO:
60 V
Emisor- Voltaje base VEBO:
7 V
Voltaje de saturación colector-emisor:
180 mV
Corriente máxima del colector de CC:
3 A
Producto de ganancia de ancho de banda fT:
140 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Ganancia de corriente CC hFE Max:
-
Embalaje:
Carrete
Marca:
Diodos incorporados
Corriente continua del colector:
3 A
Colector de CC / Ganancia base hfe Min:
50
Sensible a la humedad:
Yes
Pd - Disipación de energía:
5 W
Tipo de producto:
BJT - Transistores bipolares
Calificación:
AEC-Q101
Cantidad de paquete de fábrica:
2500
Subcategoría:
Transistores
Unidad de peso:
0.003422 oz
Tags
DXTN3, DXTN, DXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Imagen Parte # Descripción
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Mfr.#: XC3S400-4TQG144I

OMO.#: OMO-XC3S400-4TQG144I

FPGA - Field Programmable Gate Array 400000 SYSTEM GATE 1.2 VOLT FPGA
AT24CM02-SSHM-T

Mfr.#: AT24CM02-SSHM-T

OMO.#: OMO-AT24CM02-SSHM-T

EEPROM 1.7-5.5V, 1MHz, Ind Tmp, 8-SOIC-N
MT29F1G01ABBFDWB-IT:F TR

Mfr.#: MT29F1G01ABBFDWB-IT:F TR

OMO.#: OMO-MT29F1G01ABBFDWB-IT-F-TR

NAND Flash SLC 1G 1GX1 UPDFN
C2220C476M8N2CAUTO

Mfr.#: C2220C476M8N2CAUTO

OMO.#: OMO-C2220C476M8N2CAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 47uF X8L 2220 20% AEC-Q200
NX3225SA-25.000M-STD-CRS-2

Mfr.#: NX3225SA-25.000M-STD-CRS-2

OMO.#: OMO-NX3225SA-25-000M-STD-CRS-2-NDK

CRYSTAL RESONATOR
A759MX447M1HAAE028

Mfr.#: A759MX447M1HAAE028

OMO.#: OMO-A759MX447M1HAAE028-KEMET

Aluminum Organic Polymer Capacitors 50V 440uF 20% ESR=28mOhms
XC3S400-4TQG144I

Mfr.#: XC3S400-4TQG144I

OMO.#: OMO-XC3S400-4TQG144I-XILINX

Field-Programmable Gate Array
AT24CM02-SSHM-T

Mfr.#: AT24CM02-SSHM-T

OMO.#: OMO-AT24CM02-SSHM-T-MICROCHIP-TECHNOLOGY

IC EEPROM 2M I2C 1MHZ 8SOIC
MT29F1G01ABBFDWB-IT:F TR

Mfr.#: MT29F1G01ABBFDWB-IT:F TR

OMO.#: OMO-MT29F1G01ABBFDWB-IT-F-TR-MICRON-TECHNOLOGY

SLC 1G 1GX1 UPDFN
505568-0271

Mfr.#: 505568-0271

OMO.#: OMO-505568-0271-1190

Micro-Lock PLUS Vertical Header 1.25mm Pitch Single Row 2 Circuits Tin-Bismuth Plating Polyamide Black Emboss T/R (Alt: 5055680271)
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de DXTN3C60PSQ-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,61 US$
0,61 US$
10
0,51 US$
5,06 US$
100
0,31 US$
30,90 US$
1000
0,24 US$
239,00 US$
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