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IXTN600N04T2

IXTN600N04T2
Mfr. #:
IXTN600N04T2
Fabricante:
Littelfuse
Descripción:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTN600N04T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXTN600N04T2 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Rectificadores de puente
Serie
IXTN600N04
Escribe
TrenchT2 GigaMOS
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HiPerFET
Paquete-Estuche
SOT-227B
Disipación de potencia Pd
940 W
Corriente de salida
600 A
Otoño
250 ns
Hora de levantarse
20 ns
Tags
IXTN6, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B
***ical
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descripción Valores Precio
IXTN600N04T2
DISTI # V99:2348_15878365		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		2
  • 500:$15.5400
  • 200:$16.3600
  • 100:$17.7500
  • 50:$18.3800
  • 25:$19.2500
  • 10:$20.8500
  • 5:$21.9300
  • 1:$22.7000
IXTN600N04T2
DISTI # IXTN600N04T2-ND		IXYS CorporationMOSFET N-CH 40V 600A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		370In Stock
  • 100:$21.7771
  • 10:$25.4990
  • 1:$27.5700
IXTN600N04T2
DISTI # 27158570		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		26
  • 500:$16.5984
  • 200:$17.4432
  • 100:$19.0080
  • 50:$19.5744
  • 25:$20.4480
  • 10:$22.2528
  • 5:$23.3664
  • 1:$24.0576
IXTN600N04T2
DISTI # 27472446		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		2
  • 1:$22.7000
IXTN600N04T2
DISTI # 747-IXTN600N04T2		IXYS CorporationDiscrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		449
  • 1:$25.0600
  • 5:$24.3400
  • 10:$23.1800
  • 25:$21.3000
  • 50:$20.3900
  • 100:$19.8000
  • 200:$18.1700
IXTN600N04T2
DISTI # C1S331700073039		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		26
  • 25:$26.5000
  • 10:$28.7000
  • 5:$31.2000
  • 1:$38.0000
Imagen Parte # Descripción
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2

 Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2

 MOSFET 60 Amps 500V
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2-IXYS-CORPORATION

 MOSFET N-CH 500V 53A SOT-227
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTN600N04T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
23,31 US$
23,31 US$
10
22,14 US$
221,44 US$
100
20,98 US$
2 097,90 US$
500
19,81 US$
9 906,75 US$
1000
18,65 US$
18 648,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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