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ZXMN6A11DN8TA

ZXMN6A11DN8TA
Mfr. #:
ZXMN6A11DN8TA
Fabricante:
Diodes Incorporated
Descripción:
MOSFET Dl 60V N-Chnl UMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZXMN6A11DN8TA Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
ZXMN6A11DN8TA más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
3.2 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.1 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.5 mm
Longitud:
5 mm
Serie:
ZXMN6A111
Tipo de transistor:
2 N-Channel
Escribe:
MOSFET
Ancho:
4 mm
Marca:
Diodos incorporados
Otoño:
4.6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.5 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
8.2 ns
Tiempo típico de retardo de encendido:
1.95 ns
Unidad de peso:
0.002610 oz
Tags
ZXMN6A11DN8TA, ZXMN6A11DN8T, ZXMN6A11DN, ZXMN6A11D, ZXMN6A1, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8
***C
Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R
***ment14 APAC
MOSFET, DUAL, N, 60V, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.2A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:13.7A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
***Yang
Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET, 60V, 3.5A, 100mΩ
***ure Electronics
Dual N-Channel 60 V 2 W 13 nC PowerTrench Surface Mount Mosfet - SOIC-8
***rchild Semiconductor
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***emi
Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ
***Yang
Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***ure Electronics
Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8
***ark
Dual Mosfet, Dual N Channel, 3.5 A, 60 V, 100 Mohm, 10 V, 1.7 V Rohs Compliant: Yes
***ment14 APAC
Transistor, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm;
***rchild Semiconductor
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***nell
TRANSISTOR, MOSFET; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V
***et
Transistor MOSFET Array Dual N-CH 60V 3.8A 8-Pin SOIC T/R
***ponent Sense
Trans MOSFET N-CH 60V 3.8A 8-Pin SOIC N T/R - Tape and Reel
***ter Electronics
60V,3.5A,105 OHM, DUAL NCH LOGIC LEVEL ULTRAFET POWER MOSFET
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
*** Source Electronics
N-Channel Dual MOSFET | MOSFET 2N-CH 62V 3.6A 8-SOIC
***Yang
MOSFET 62V N-Channel PowerTrench - Bulk
***el Electronic
IC WHITE LED DRIVER 24SSOP
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***C
Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 60 V 0.085 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: No
***(Formerly Allied Electronics)
IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC
***ure Electronics
Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8
***id Electronics
Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF
***ineon SCT
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descripción Valores Precio
ZXMN6A11DN8TA
DISTI # V36:1790_06708109		Zetex / Diodes IncTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
RoHS: Compliant		24500
  • 500:$0.3894
ZXMN6A11DN8TA
DISTI # V72:2272_06708109		Zetex / Diodes IncTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
RoHS: Compliant		625
  • 500:$0.4144
  • 250:$0.4189
  • 100:$0.4233
  • 25:$0.6263
  • 10:$0.6521
  • 1:$0.8068
ZXMN6A11DN8TA
DISTI # ZXMN6A11DN8CT-ND		Diodes IncorporatedMOSFET 2N-CH 60V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6580In Stock
  • 100:$0.6883
  • 10:$0.8920
  • 1:$1.0200
ZXMN6A11DN8TA
DISTI # ZXMN6A11DN8TR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		6500In Stock
  • 500:$0.4950
ZXMN6A11DN8TA
DISTI # 29474021		Zetex / Diodes IncTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
RoHS: Compliant		24500
  • 500:$0.3894
ZXMN6A11DN8TA
DISTI # 27607419		Zetex / Diodes IncTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
RoHS: Compliant		625
  • 500:$0.4144
  • 250:$0.4189
  • 100:$0.4233
  • 28:$0.6263
ZXMN6A11DN8TA
DISTI # ZXMN6A11DN8TA		Diodes IncorporatedTrans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN6A11DN8TA)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$0.2699
  • 1000:$0.2569
  • 2000:$0.2449
  • 3000:$0.2329
  • 5000:$0.2279
ZXMN6A11DN8TA
DISTI # 62M1304		Diodes IncorporatedMOSFET, N CHANNEL, DUAL, 60V, 3.2A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes50
  • 1:$0.8710
  • 10:$0.7310
  • 25:$0.6490
  • 50:$0.5690
  • 100:$0.4870
ZXMN6A11DN8TA
DISTI # 70438840		Diodes IncorporatedMOSFET Dual N-Channel 60V 3.2A SOIC8
RoHS: Compliant		0
  • 25:$0.7200
  • 50:$0.6300
  • 100:$0.5600
  • 250:$0.5000
ZXMN6A11DN8TA
DISTI # 522-ZXMN6A11DN8TA		Diodes IncorporatedMOSFET Dl 60V N-Chnl UMOS
RoHS: Compliant		966
  • 1:$0.8400
  • 10:$0.6980
  • 100:$0.4500
ZXMN6A11DN8TAZetex / Diodes Inc 11111
    ZXMN6A11DN8TA
    DISTI # 1471151    		Diodes IncorporatedMOSFET, DUAL, N, 60V, SO-8
    RoHS: Compliant    		50
    • 1:$1.3400
    • 10:$1.1100
    • 100:$0.7120
    • 500:$0.7120
    ZXMN6A11DN8TA
    DISTI # C1S205700295822    		Diodes IncorporatedTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
    RoHS: Compliant    		24500
    • 500:$0.3894
    ZXMN6A11DN8TA
    DISTI # C1S205700117843    		Diodes IncorporatedTrans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R
    RoHS: Compliant    		625
    • 250:$0.4189
    • 100:$0.4233
    • 25:$0.6263
    • 10:$0.6521
    ZXMN6A11DN8TA-79
    DISTI # C1S205700590019    		Diodes IncorporatedUnclassified2000
    • 1000:$0.3390
    • 500:$0.3690
    ZXMN6A11DN8TA
    DISTI # 1471151    		Diodes IncorporatedMOSFET, DUAL, N, 60V, SO-8
    RoHS: Compliant    		92
    • 5:£0.6170
    • 25:£0.5320
    • 100:£0.3370
    • 250:£0.3310
    • 500:£0.3240
    Imagen Parte # Descripción
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    Mfr.#: STM32F779IIT6

    OMO.#: OMO-STM32F779IIT6

    		 ARM Microcontrollers - MCU 16/32-BITS MICROS
    RC0805FR-0710KL

    Mfr.#: RC0805FR-0710KL

    OMO.#: OMO-RC0805FR-0710KL

    		 Thick Film Resistors - SMD 10K OHM 1%
    RC1206FR-073KL

    Mfr.#: RC1206FR-073KL

    OMO.#: OMO-RC1206FR-073KL

    		 Thick Film Resistors - SMD 3K OHM 1%
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    OMO.#: OMO-RC0805FR-0722KL

    		 Thick Film Resistors - SMD 22K OHM 1%
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    Mfr.#: 87898-0626

    OMO.#: OMO-87898-0626-410

    		 Headers & Wire Housings 2.54mm SRSW SMT Hdr W/O Cap 2.5SnLF 6Ckt
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    Mfr.#: STM32F779IIT6

    OMO.#: OMO-STM32F779IIT6-STMICROELECTRONICS

    		 Microcontrollers - MCU ARM Microcontrollers - MCU 16/32-BITS MICROS
    RC0805FR-0710RL

    Mfr.#: RC0805FR-0710RL

    OMO.#: OMO-RC0805FR-0710RL-YAGEO

    		 Thick Film Resistors - SMD 10 OHM 1%
    RC1206FR-073KL

    Mfr.#: RC1206FR-073KL

    OMO.#: OMO-RC1206FR-073KL-YAGEO

    		 Thick Film Resistors - SMD 3K OHM 1%
    RC0805FR-0710KL

    Mfr.#: RC0805FR-0710KL

    OMO.#: OMO-RC0805FR-0710KL-YAGEO

    		 Thick Film Resistors - SMD 10K OHM 1%
    RC0805FR-0722KL

    Mfr.#: RC0805FR-0722KL

    OMO.#: OMO-RC0805FR-0722KL-YAGEO

    		 Thick Film Resistors - SMD 22K OHM 1%
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de ZXMN6A11DN8TA es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,84 US$
    0,84 US$
    10
    0,70 US$
    6,98 US$
    100
    0,45 US$
    45,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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