NSVB123JPDXV6T1G

NSVB123JPDXV6T1G
Mfr. #:
NSVB123JPDXV6T1G
Fabricante:
ON Semiconductor
Descripción:
TRANS PREBIAS NPN/PNP SOT563
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSVB123JPDXV6T1G Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EN Semiconductor
categoria de producto
Transistores (BJT): matrices, pre-polarizadas
Serie
NSBC123JPDXV6
embalaje
Tape & Reel (TR)
Paquete-Estuche
SOT-563, SOT-666
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
SOT-563
Potencia máxima
500mW
Tipo transistor
1 NPN, 1 PNP - Pre-Biased (Dual)
Colector-corriente-Ic-Max
100mA
Voltaje-Colector-Emisor-Ruptura-Máx.
50V
Resistencia-Base-R1-Ohms
2.2k
Resistencia-Emisor-Base-R2-Ohms
4.7k
DC-Current-Gain-hFE-Min-Ic-Vce
80 @ 5mA, 10V
Vce-Saturación-Max-Ib-Ic
250mV @ 300μA, 10mA
Recolector-actual-Corte-Máx.
500nA
Transición de frecuencia
-
Tags
NSVB1, NSVB, NSV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
***Semiconductor
Complementary Bipolar Digital Transistor (BRT)
***i-Key
TRANS PREBIAS NPN/PNP SOT563
Parte # Mfg. Descripción Valores Precio
NSVB123JPDXV6T1G
DISTI # NSVB123JPDXV6T1G-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    NSVB123JPDXV6T1G
    DISTI # NSVB123JPDXV6T1G
    ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Bulk (Alt: NSVB123JPDXV6T1G)
    RoHS: Not Compliant
    Min Qty: 3572
    Container: Bulk
    Americas - 0
    • 35720:$0.0859
    • 17860:$0.0879
    • 10716:$0.0889
    • 7144:$0.0899
    • 3572:$0.0909
    NSVB123JPDXV6T1G
    DISTI # NSVB123JPDXV6T1G
    ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSVB123JPDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel
    Americas - 0
      NSVB123JPDXV6T1G
      DISTI # 863-NSVB123JPDXV6T1G
      ON SemiconductorBipolar Transistors - Pre-Biased SS SRF MT RST XSTR
      RoHS: Compliant
      0
      • 4000:$0.0960
      • 8000:$0.0960
      • 24000:$0.0880
      • 48000:$0.0850
      NSVB123JPDXV6T1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
      RoHS: Compliant
      52000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      NSVB123JPDXV6T1GON Semiconductor 40000
        NSVB123JPDXV6T1GON Semiconductor 2696
          Imagen Parte # Descripción
          NSVB123JPDXV6T1G

          Mfr.#: NSVB123JPDXV6T1G

          OMO.#: OMO-NSVB123JPDXV6T1G

          Bipolar Transistors - Pre-Biased SS SRF MT RST XSTR
          NSVB123JPDXV6T1G

          Mfr.#: NSVB123JPDXV6T1G

          OMO.#: OMO-NSVB123JPDXV6T1G-ON-SEMICONDUCTOR

          TRANS PREBIAS NPN/PNP SOT563
          Disponibilidad
          Valores:
          Available
          En orden:
          5500
          Ingrese la cantidad:
          El precio actual de NSVB123JPDXV6T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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          100
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          500
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          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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