SIHP22N60S-E3

SIHP22N60S-E3
Mfr. #:
SIHP22N60S-E3
Fabricante:
Vishay Siliconix
Descripción:
IGBT Transistors MOSFET 600V N-Channel Superjunction TO-220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP22N60S-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay / Siliconix
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
E
embalaje
Tubo
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
250 W
Otoño
59 ns
Hora de levantarse
68 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
22 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
160 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
77 ns
Tiempo de retardo de encendido típico
24 ns
Qg-Gate-Charge
75 nC
Transconductancia directa-Mín.
9.4 S
Tags
SIHP22N60S, SIHP22N60, SIHP22, SIHP2, SIHP, SIH
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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
***ure Electronics
S-Series N-Channel 650 V 0.19 O 110 nC Flange Mount Power Mosfet - TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 22A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SIHP22N60S-E3
DISTI # 74R0210
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 22ATO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    SIHP22N60S-E3
    DISTI # 781-SIHP22N60S-E3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    0
      SIHP22N60S-E3Vishay Intertechnologies 125
        SIHP22N60S-E3
        DISTI # 1794787
        Vishay IntertechnologiesMOSFET, N CH, 600V, 22A, TO220
        RoHS: Compliant
        0
        • 1:£4.0800
        • 10:£3.0500
        • 100:£2.5100
        • 250:£2.4300
        • 500:£2.1800
        Imagen Parte # Descripción
        SIHP22N60EF-GE3

        Mfr.#: SIHP22N60EF-GE3

        OMO.#: OMO-SIHP22N60EF-GE3

        MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
        SIHP22N60AEL-GE3

        Mfr.#: SIHP22N60AEL-GE3

        OMO.#: OMO-SIHP22N60AEL-GE3

        MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3

        MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60E

        Mfr.#: SIHP22N60E

        OMO.#: OMO-SIHP22N60E-1190

        Nuevo y original
        SIHP22N60E-E3,SIHP22N60S

        Mfr.#: SIHP22N60E-E3,SIHP22N60S

        OMO.#: OMO-SIHP22N60E-E3-SIHP22N60S-1190

        Nuevo y original
        SIHP22N60EE3

        Mfr.#: SIHP22N60EE3

        OMO.#: OMO-SIHP22N60EE3-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60EGE3

        Mfr.#: SIHP22N60EGE3

        OMO.#: OMO-SIHP22N60EGE3-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60S

        Mfr.#: SIHP22N60S

        OMO.#: OMO-SIHP22N60S-1190

        Nuevo y original
        SIHP22N60S-E3/45

        Mfr.#: SIHP22N60S-E3/45

        OMO.#: OMO-SIHP22N60S-E3-45-1190

        Nuevo y original
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3-VISHAY

        MOSFET N-CH 600V 20A TO220AB
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de SIHP22N60S-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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