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SI3442BDV-T1-E3

SI3442BDV-T1-E3
Mfr. #:
SI3442BDV-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 20V 3A 6-TSOP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3442BDV-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI3442BDV-T1-E3 más información
Atributo del producto
Valor de atributo
Tags
SI3442BDV-T, SI3442B, SI3442, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - TSOP-6
***ical
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
***ment14 APAC
MOSFET, N, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:2.5V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:860mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Base Number:3442; Current Id Max:3A; Output Current Max:860mA; Package / Case:TSOP; Power Dissipation Pd:860mW; Power Dissipation Pd:20mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3442BDV-T1-E3
DISTI # V72:2272_09216637		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant		443
  • 250:$0.3560
  • 100:$0.3609
  • 25:$0.4262
  • 10:$0.5209
  • 1:$0.6408
SI3442BDV-T1-E3
DISTI # V36:1790_09216637		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 1500000:$0.2045
  • 300000:$0.2048
  • 3000:$0.2050
SI3442BDV-T1-E3
DISTI # SI3442BDV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10426In Stock
  • 1000:$0.2431
  • 500:$0.3146
  • 100:$0.4003
  • 10:$0.5360
  • 1:$0.6300
SI3442BDV-T1-E3
DISTI # SI3442BDV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10426In Stock
  • 1000:$0.2431
  • 500:$0.3146
  • 100:$0.4003
  • 10:$0.5360
  • 1:$0.6300
SI3442BDV-T1-E3
DISTI # SI3442BDV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.1777
  • 15000:$0.1874
  • 6000:$0.2013
  • 3000:$0.2152
SI3442BDV-T1-E3
DISTI # 30150523		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant		443
  • 31:$0.6408
SI3442BDV-T1-E3
DISTI # SI3442BDV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3442BDV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 6000
  • 30000:$0.1809
  • 18000:$0.1849
  • 12000:$0.1899
  • 6000:$0.1949
  • 3000:$0.1999
SI3442BDV-T1-E3
DISTI # SI3442BDV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R (Alt: SI3442BDV-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1609
  • 18000:€0.1729
  • 12000:€0.1879
  • 6000:€0.2179
  • 3000:€0.3199
SI3442BDV-T1-E3
DISTI # 57J5636		Vishay IntertechnologiesMOSFET Transistor, N Channel, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V0
  • 6000:$0.2000
  • 3000:$0.2100
  • 1:$0.2110
SI3442BDV-T1-E3.
DISTI # 81AC9915		Vishay IntertechnologiesN-CHANNEL 2.5-V (G-S) MOSFET ROHS COMPLIANT: NO6000
  • 6000:$0.2000
  • 3000:$0.2100
  • 1:$0.2110
SI3442BDV-T1-E3
DISTI # 781-SI3442BDV-E3		Vishay IntertechnologiesMOSFET 20V 3A
RoHS: Compliant		5572
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI3442BDV-T1-E3Vishay Siliconix3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET8209
  • 5334:$0.1320
  • 1191:$0.1500
  • 1:$0.4800
SI3442BDV-T1-E3Vishay Intertechnologies3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET2588
  • 1112:$0.1560
  • 201:$0.1800
  • 1:$0.6000
SI3442BDV-T1-E3Vishay Siliconix3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET1804
  • 1112:$0.1560
  • 201:$0.1800
  • 1:$0.6000
SI3442BDV-T1-E3Vishay Siliconix 2711
    SI3442BDV-T1-E3Vishay Intertechnologies 1365
      SI3442BDV-T1-E3Vishay BLH 3235
      • 12:$0.4500
      • 46:$0.2925
      • 172:$0.1688
      • 594:$0.1440
      • 1286:$0.1260
      • 3057:$0.1170
      SI3442BDV-T1-E3Vishay Siliconix 2255
      • 12:$0.4500
      • 46:$0.2925
      • 172:$0.1688
      • 594:$0.1440
      • 1286:$0.1260
      SI3442BDVT1E3Vishay SemiconductorsSmall Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		2325
        SI3442BDV-T1-E3
        DISTI # 1497610        		Vishay IntertechnologiesMOSFET, N, TSOP
        RoHS: Compliant        		0
        • 3000:$0.3290
        • 1000:$0.3620
        • 500:$0.4520
        • 100:$0.5490
        • 10:$0.7220
        • 1:$0.8890
        SI3442BDV-T1-E3
        DISTI # 1497610RL        		Vishay IntertechnologiesMOSFET, N, TSOP
        RoHS: Compliant        		0
        • 3000:$0.3290
        • 1000:$0.3620
        • 500:$0.4520
        • 100:$0.5490
        • 10:$0.7220
        • 1:$0.8890
        SI3442BDV-T1-E3Vishay IntertechnologiesMOSFET 20V 3A
        RoHS: Compliant        		Americas -
          Imagen Parte # Descripción
          SI3442BDV-T1-E3

          Mfr.#: SI3442BDV-T1-E3

          OMO.#: OMO-SI3442BDV-T1-E3

          		 MOSFET 20V 3A
          SI3442BDV-T1-GE3

          Mfr.#: SI3442BDV-T1-GE3

          OMO.#: OMO-SI3442BDV-T1-GE3

          		 MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
          SI3442BDV

          Mfr.#: SI3442BDV

          OMO.#: OMO-SI3442BDV-1190

          		 Nuevo y original
          SI3442BDV-T1

          Mfr.#: SI3442BDV-T1

          OMO.#: OMO-SI3442BDV-T1-1190

          		 Nuevo y original
          SI3442BDV-T1-E3

          Mfr.#: SI3442BDV-T1-E3

          OMO.#: OMO-SI3442BDV-T1-E3-VISHAY

          		 MOSFET N-CH 20V 3A 6-TSOP
          SI3442BDV-T1-GE3

          Mfr.#: SI3442BDV-T1-GE3

          OMO.#: OMO-SI3442BDV-T1-GE3-VISHAY

          		 MOSFET N-CH 20V 3A 6-TSOP
          SI3442BDV-T1TE3

          Mfr.#: SI3442BDV-T1TE3

          OMO.#: OMO-SI3442BDV-T1TE3-1190

          		 Nuevo y original
          SI3442BDVT1E3

          Mfr.#: SI3442BDVT1E3

          OMO.#: OMO-SI3442BDVT1E3-1190

          		 Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          Disponibilidad
          Valores:
          Available
          En orden:
          4500
          Ingrese la cantidad:
          El precio actual de SI3442BDV-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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