EVAL2EDL23N06PJTOBO1

EVAL2EDL23N06PJTOBO1
Mfr. #:
EVAL2EDL23N06PJTOBO1
Fabricante:
Infineon Technologies
Descripción:
Power Management IC Development Tools Evaluation Board for 2EDL23N06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors like the IPL60R199CP CoolMOS CP .
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
EVAL2EDL23N06PJTOBO1 Ficha de datos
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Tags
EVAL2E, EVAL2, EVAL, EVA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Evaluation Board, Mosfet Gate Driver Rohs Compliant: Yes
***et Europe
2EDL23N06PJ Half Bridge Gate Driver Evaluation Board
***ow.cn
2EDL23N06PJ Gate and Power Driver Evaluation Board
***ineon
Evaluation Board for 2EDL23N06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors like the IPL60R199CP CoolMOS CP . | Summary of Features: Overcurrent comparator; Enable function, Fault indicator; Individual control circuits for both outputs; Filtered detection of under voltage supply; All inputs clamped by diodes; Off line gate clamping function; Asymmetric undervoltage lockout thresholds for high side and low side; Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology; Ultra fast bootstrap diode | Benefits: Space saving package; Improved energy efficiency | Target Applications: majorhomeapplicances; induction-heating; drives; ups; solar; welding; motorcontrol
Parte # Mfg. Descripción Valores Precio
EVAL2EDL23N06PJTOBO1
DISTI # SP001114680
Infineon Technologies AG2EDL23N06PJ Half Bridge Gate Driver Evaluation Board (Alt: SP001114680)
Min Qty: 1
Europe - 0
  • 1000:€105.7800
  • 500:€109.6500
  • 100:€113.5200
  • 50:€117.3900
  • 25:€121.2600
  • 10:€125.1300
  • 1:€129.0000
EVAL2EDL23N06PJTOBO1
DISTI # 726-EVAL2EDL23N06PJT
Infineon Technologies AGPower Management IC Development Tools Evaluation Board for 2EDL23N06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors like the IPL60R199CP CoolMOS CP .
RoHS: Compliant
4
  • 1:$92.7100
Imagen Parte # Descripción
EVAL2EDL23N06PJTOBO1

Mfr.#: EVAL2EDL23N06PJTOBO1

OMO.#: OMO-EVAL2EDL23N06PJTOBO1-1190

Power Management IC Development Tools Evaluation Board for 2EDL23N06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors like the IPL60R199CP CoolMOS CP .
EVAL2EDL23I06PJTOBO1

Mfr.#: EVAL2EDL23I06PJTOBO1

OMO.#: OMO-EVAL2EDL23I06PJTOBO1-1190

Power Management IC Development Tools Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs
Disponibilidad
Valores:
Available
En orden:
5500
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El precio actual de EVAL2EDL23N06PJTOBO1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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