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NDBA100N10BT4H

NDBA100N10BT4H
Mfr. #:
NDBA100N10BT4H
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 100V 100A DPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NDBA100N10BT4H Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EN Semiconductor
categoria de producto
Transistores - FET, MOSFET - Sencillo
Tecnología
Si
Tags
NDBA1, NDBA, NDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
***emi
Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel
***r Electronics
Power Field-Effect Transistor
***el Electronic
RES SMD 30.9 OHM 1% 1W 2512
***ark
REEL / NCH 100A 100V TO-263
***icroelectronics
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) H2PAK T/R
*** Electronic Components
MOSFET N-Ch 100V 6mOhm 110A STripFET VII
***icroelectronics SCT
Power MOSFETs, 100V, 110A, H2PAK-2, Tape and Reel
***S
French Electronic Distributor since 1988
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***ure Electronics
Single N-Channel 100 V 6.5 mOhm 51 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***(Formerly Allied Electronics)
IRFS3307ZPBF N-channel MOSFET Transistor, 120 A, 75 V, 3-Pin DPAK
***ure Electronics
Single N-Channel 75 V 5.8 mOhm 79nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK Tube
***icontronic
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET; Leaded Process Compatible:Yes; P; MOSFET; Leaded Process Compatible:Yes; Package / Case:D2-PAK; Peak Reflow Compatible (260 C):Yes
***nell
MOSFET, N, 75V, D2-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:120A; Resistance, Rds On:0.0046ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Base Number:3307; Current, Idm Pulse:480A; No. of Pins:3; Power Dissipation:230mW; Voltage, Vds Max:75V; Voltage, Vgs th Max:4V
***ical
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***icroelectronics
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
***ure Electronics
N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 100V, 80A, 175DEG C, 110W;
***icroelectronics SCT
Power MOSFETs, 100V, 80A, H2PAK-2, Tape and Reel
Parte # Mfg. Descripción Valores Precio
NDBA100N10BT4H
DISTI # V99:2348_07316752		ON SemiconductorTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		68
  • 100:$1.2680
  • 25:$1.3519
  • 10:$1.4931
  • 1:$1.6781
NDBA100N10BT4H
DISTI # NDBA100N10BT4H-ND		ON SemiconductorMOSFET N-CH 100V 100A DPAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    NDBA100N10BT4H
    DISTI # 25939587    		ON SemiconductorTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		68
    • 25:$1.3519
    • 10:$1.4931
    • 8:$1.6781
    NDBA100N10BT4H
    DISTI # 863-NDBA100N10BT4H    		ON SemiconductorMOSFET NCH 100A 100V TO-263
    RoHS: Compliant    		0
      NDBA100N10BT4HON Semiconductor 
      RoHS: Not Compliant      		375
      • 1000:$0.9900
      • 500:$1.0400
      • 100:$1.0800
      • 25:$1.1300
      • 1:$1.2200
      NDBA100N10BT4H
      DISTI # C1S541901275369      		ON SemiconductorMOSFETs68
      • 25:$1.3576
      • 10:$1.4985
      Imagen Parte # Descripción
      NDBA100N10B

      Mfr.#: NDBA100N10B

      OMO.#: OMO-NDBA100N10B-1190

      		 Nuevo y original
      NDBA100N10BT4H

      Mfr.#: NDBA100N10BT4H

      OMO.#: OMO-NDBA100N10BT4H-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 100A DPAK
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de NDBA100N10BT4H es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,39 US$
      1,39 US$
      10
      1,32 US$
      13,18 US$
      100
      1,25 US$
      124,86 US$
      500
      1,18 US$
      589,60 US$
      1000
      1,11 US$
      1 109,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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