OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

RJH1CD6DPQ-E0#T2

RJH1CD6DPQ-E0#T2
Mfr. #:
RJH1CD6DPQ-E0#T2
Fabricante:
Renesas Electronics
Descripción:
IGBT Transistors IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJH1CD6DPQ-E0#T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Electrónica Renesas
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Electrónica Renesas
Sensible a la humedad:
Yes
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
RJH1CD, RJH1C, RJH1, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 1200V 50A 290W TO247
*** Electronic Components
IGBT Transistors IGBT
*** Source Electronics
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
***ure Electronics
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
***ource
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A
***ment14 APAC
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W
***ineon SCT
The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS
***ineon
IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price
***ark
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***p One Stop
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.4pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W
***ineon SCT
Infineon's 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A, Field Stop Trench
***ark
Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
Imagen Parte # Descripción
RJH1CD6DPQ-E0#T2

Mfr.#: RJH1CD6DPQ-E0#T2

OMO.#: OMO-RJH1CD6DPQ-E0-T2

 IGBT Transistors IGBT
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de RJH1CD6DPQ-E0#T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • Infrared Human Sensor Reference Design
    Infrared Human Sensor Reference Design
    Renesas’ RL78 reference design indicates human absence/presence using an infrared sensor to turn an LED on and off automatically.
  • PM2.5 Monitor with Portable Battery
    PM2.5 Monitor with Portable Battery
    Renesas' PM2.5 monitor is a portable device that can measure and detect the concentration of atmospheric particulate matter (PM).
  • Synergy Starter Kit SK-S7G2
    Synergy Starter Kit SK-S7G2
    Renesas Synergy™ SK-S7G2 Starter Kit is a low-cost way to access the entire Synergy Platform enabling full development using the vast majority of all SSP functions.
  • Smart Moisture Sensor
    Smart Moisture Sensor
    Renesas' quick solutions feature a smart moisture sensor reference design using the RL78/G11 MCU to measure the conditions of soil and to transfer the data.
  • Compare RJH1CD6DPQ-E0#T2
    Compare RJH1CD6DPQ-E0#T2
    RJH1CD5DPQE0T2 vs RJH1CD6DPQE0T2 vs RJH1CD7DPQE0T2
  • RPBRX65N Envision Kit
    RPBRX65N Envision Kit
    Renesas' RPBRX65N envision kit addresses the need of microcontrollers supporting all different aspects of security like confidentiality, integrity, and availability.
More Newest Products
Top