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RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2
Mfr. #:
RJH65D27BDPQ-A0#T2
Fabricante:
Renesas Electronics
Descripción:
IGBT Transistors IGBT - 650V/50A/TO-247A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJH65D27BDPQ-A0#T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RJH65D27BDPQ-A0#T2 más información
Atributo del producto
Valor de atributo
Fabricante:
Electrónica Renesas
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247A-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.3 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
375 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RJH65D27BDPQ
Embalaje:
Tubo
Corriente continua de colector Ic Max:
100 A
Marca:
Electrónica Renesas
Corriente de fuga puerta-emisor:
+/- 1 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
RJH65, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT For Inverter 650V 50A ±30 Gate to Emitter Voltage 375W 3-Pin TO-247A Tube
***ical
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247A Tube
*** Electronic Components
IGBT Transistors IGBT - 650V/50A/TO-247A
***egrated Device Technology
IGBT for Inverter Applications
IGBT Transistors
Renesas IGBT Transistors incorporate Trench gate, thin wafer technology, and feature built-in fast recovery diode in one package. These transistors include single configuration and incorporate through hole mounting style. The IGBT transistor's collector to emitter voltage ranges from 600V to 650V. Typical applications include current resonance circuit, inverters, induction heating, microwave oven, and power factor correction circuit.Learn More
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 Headers & Wire Housings TERMINAL 20-24 BULK
Disponibilidad
Valores:
Available
En orden:
5000
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