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SIS606BDN-T1-GE3

SIS606BDN-T1-GE3
Mfr. #:
SIS606BDN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CHAN 100V POWERPAK 1212
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS606BDN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIS606BDN-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIS60, SIS6, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 100V 9.4A 8-Pin PowerPAK 1212 EP T/R
***nell
MOSFET, N-CH, 100V, 35.3A, POWERPAK SO
***ark
Mosfet, N-Ch, 100V, 35.3A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:35.3A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIS606BDN-T1-GE3
DISTI # V72:2272_21388922		Vishay IntertechnologiesSIS606BDN-T1-GE35900
  • 75000:$0.5823
  • 30000:$0.5904
  • 15000:$0.5985
  • 6000:$0.6066
  • 3000:$0.6147
  • 1000:$0.6228
  • 500:$0.7966
  • 250:$0.8987
  • 100:$0.9453
  • 50:$0.9791
  • 25:$1.0879
  • 10:$1.2088
  • 1:$1.6325
SIS606BDN-T1-GE3
DISTI # V99:2348_21388922		Vishay IntertechnologiesSIS606BDN-T1-GE30
  • 3000000:$0.6303
  • 600000:$0.6311
  • 60000:$0.6320
  • 6000:$0.6321
SIS606BDN-T1-GE3
DISTI # V36:1790_21388922		Vishay IntertechnologiesSIS606BDN-T1-GE30
  • 6000000:$0.5863
  • 3000000:$0.5865
  • 600000:$0.6021
  • 60000:$0.6279
  • 6000:$0.6321
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.5779
  • 6000:$0.6005
  • 3000:$0.6321
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SIS606BDN-T1-GE3
DISTI # 33136746		Vishay IntertechnologiesSIS606BDN-T1-GE35900
  • 15000:$0.5985
  • 6000:$0.6066
  • 3000:$0.6147
  • 1000:$0.6228
  • 500:$0.7966
  • 250:$0.8987
  • 100:$0.9453
  • 50:$0.9791
  • 25:$1.0879
  • 11:$1.2088
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3		Vishay Intertechnologies(Alt: SIS606BDN-T1-GE3)
RoHS: Compliant
Min Qty: 6000		Asia - 0
    SIS606BDN-T1-GE3
    DISTI # SIS606BDN-T1-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SIS606BDN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.5509
    • 30000:$0.5659
    • 18000:$0.5819
    • 12000:$0.6069
    • 6000:$0.6249
    SIS606BDN-T1-GE3
    DISTI # SIS606BDN-T1-GE3    		Vishay Intertechnologies(Alt: SIS606BDN-T1-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€0.5999
    • 500:€0.6069
    • 100:€0.6179
    • 50:€0.6269
    • 25:€0.7089
    • 10:€0.8739
    • 1:€1.2179
    SIS606BDN-T1-GE3
    DISTI # 59AC7462    		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
    • 10000:$0.5470
    • 6000:$0.5590
    • 4000:$0.5810
    • 2000:$0.6450
    • 1000:$0.7100
    • 1:$0.7400
    SIS606BDN-T1-GE3
    DISTI # 78-SIS606BDN-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		0
    • 1:$1.5000
    • 10:$1.2300
    • 100:$0.9500
    • 500:$0.8170
    • 1000:$0.6440
    • 3000:$0.6010
    • 6000:$0.5710
    • 9000:$0.5500
    SIS606BDN-T1-GE3
    DISTI # 2846620    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 35.3A, POWERPAK SO0
    • 500:£0.6240
    • 250:£0.6750
    • 100:£0.7260
    • 10:£0.9870
    • 1:£1.3000
    SIS606BDN-T1-GE3
    DISTI # 2846620    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 35.3A, POWERPAK SO
    RoHS: Compliant    		0
    • 1000:$1.0600
    • 500:$1.3400
    • 100:$1.6200
    • 5:$2.0700
    Imagen Parte # Descripción
    SIS606BDN-T1-GE3

    Mfr.#: SIS606BDN-T1-GE3

    OMO.#: OMO-SIS606BDN-T1-GE3

    		 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    SIS606BDN-T1-GE3

    Mfr.#: SIS606BDN-T1-GE3

    OMO.#: OMO-SIS606BDN-T1-GE3-VISHAY

    		 MOSFET N-CHAN 100V POWERPAK 1212
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SIS606BDN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,82 US$
    0,82 US$
    10
    0,78 US$
    7,80 US$
    100
    0,74 US$
    73,85 US$
    500
    0,70 US$
    348,70 US$
    1000
    0,66 US$
    656,40 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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