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FGA15N120ANTDTU_F109

FGA15N120ANTDTU_F109
Mfr. #:
FGA15N120ANTDTU_F109
Fabricante:
Fairchild Semiconductor
Descripción:
IGBT Transistors 1200V NPT Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA15N120ANTDTU_F109 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Unidad de peso
0.225789 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-3P-3, SC-65-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-3PN
Configuración
Único
Potencia máxima
186W
Tiempo de recuperación inverso trr
330ns
Colector-corriente-Ic-Max
30A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
NPT y trinchera
Colector de corriente pulsado Icm
45A
Vce-en-Max-Vge-Ic
2.4V @ 15V, 15A
Energía de conmutación
3mJ (on), 600μJ (off)
Gate-Charge
120nC
Td-encendido-apagado-25 ° C
15ns/160ns
Condición de prueba
600V, 15A, 10 Ohm, 15V
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
1200 V
Voltaje máximo del emisor de puerta
+/- 20 V
Colector-continuo-Corriente-Ic-Max
24 A
Tags
FGA15N120ANTDTU-F, FGA15N120ANTDT, FGA15N120ANT, FGA15N120AN, FGA15N120A, FGA15N120, FGA15N1, FGA15N, FGA15, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3
***ow.cn
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube
***ment14 APAC
IGBT, SINGLE, 1.2KV, 30A, TO-3P-3
***th Star Micro
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V UltraFast Discrete IGBT
***el Electronic
RF Connectors / Coaxial Connectors 250Vrms 0.07ohms 11GHZ
***or
INSULATED GATE BIPOLAR GATE TRAS
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
***nell
IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
***rchild Semiconductor
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
***rchild Semiconductor
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
***ical
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1250V, 15A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
***ark
RAIL / 1250V 15A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***p One Stop Global
Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
***el Electronic
Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ure Electronics
GenX3™ XPT™ IGBT 900 V 8 A Through Hole High-Speed IGBT - TO-220-3
***i-Key
IGBT 900V 20A 125W TO220
***el Electronic
IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
***trelec
IGBT, 900V, 20A, TO-220
Parte # Mfg. Descripción Valores Precio
FGA15N120ANTDTU-F109
DISTI # 26733881		ON Semiconductor1200V NPT TRENCH IGBT3600
  • 5400:$1.2829
  • 3600:$1.3379
  • 1800:$1.3978
  • 450:$1.5608
FGA15N120ANTDTU-F109
DISTI # 33626149		ON Semiconductor1200V NPT TRENCH IGBT1737
  • 9:$1.2370
FGA15N120ANTDTU-F109
DISTI # FGA15N120ANTDTU-F109-ND		ON SemiconductorIGBT 1200V 30A 186W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		508In Stock
  • 2700:$1.4853
  • 900:$1.7611
  • 450:$1.9627
  • 25:$2.3872
  • 10:$2.5250
  • 1:$2.8100
FGA15N120ANTDTU-F109
DISTI # V36:1790_06359116		ON Semiconductor1200V NPT TRENCH IGBT0
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FGA15N120ANTDTU-F109)
    Min Qty: 214
    Container: Bulk    		Americas - 0
    • 1070:$1.3900
    • 2140:$1.3900
    • 214:$1.4900
    • 428:$1.4900
    • 642:$1.4900
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA15N120ANTDTU-F109)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€1.1900
    • 1000:€1.1900
    • 50:€1.2900
    • 100:€1.2900
    • 25:€1.3900
    • 10:€1.6900
    • 1:€1.9900
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA15N120ANTDTU-F109)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.2900
    • 900:$1.2900
    • 1800:$1.2900
    • 2700:$1.2900
    • 4500:$1.2900
    FGA15N120ANTDTU-F109
    DISTI # 31Y1431    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:186W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes2283
    • 500:$1.6300
    • 250:$1.7400
    • 100:$1.8600
    • 50:$2.0100
    • 25:$2.1700
    • 10:$2.3200
    • 1:$2.7400
    FGA15N120ANTDTU-F109
    DISTI # 512-FGA15N120ANTDTUF    		ON SemiconductorIGBT Transistors 1200V NPT Trench
    RoHS: Compliant    		497
    • 1:$2.7100
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3300
    FGA15N120ANTDTU-F109Fairchild Semiconductor Corporation 
    RoHS: Not Compliant    		73350
    • 1000:$1.5400
    • 500:$1.6200
    • 100:$1.6900
    • 25:$1.7600
    • 1:$1.9000
    FGA15N120ANTDTU_F109
    DISTI # 6715398P    		ON SemiconductorTRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), TU17
    • 500:£1.5600
    • 250:£1.6800
    • 100:£1.8000
    • 25:£1.9600
    FGA15N120ANTDTU-F109
    DISTI # 2453877    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-3
    RoHS: Compliant    		2283
    • 1000:$2.0400
    • 500:$2.4800
    • 100:$2.8300
    • 10:$3.5400
    • 1:$4.1700
    FGA15N120ANTDTU-F109
    DISTI # 2453877    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-32356
    • 500:£1.2500
    • 250:£1.4400
    • 100:£1.4700
    • 10:£1.8400
    • 1:£2.4100
    Imagen Parte # Descripción
    FGA15N120ANTDTU

    Mfr.#: FGA15N120ANTDTU

    OMO.#: OMO-FGA15N120ANTDTU

    		 IGBT Transistors 1200V NPT Trench IGBT
    FGA15N120ANTDTU_F109

    Mfr.#: FGA15N120ANTDTU_F109

    OMO.#: OMO-FGA15N120ANTDTU-F109-126

    		 IGBT Transistors 1200V NPT Trench
    FGA15N120A

    Mfr.#: FGA15N120A

    OMO.#: OMO-FGA15N120A-1190

    		 Nuevo y original
    FGA15N120ADN

    Mfr.#: FGA15N120ADN

    OMO.#: OMO-FGA15N120ADN-1190

    		 Nuevo y original
    FGA15N120AND(IGBT)

    Mfr.#: FGA15N120AND(IGBT)

    OMO.#: OMO-FGA15N120AND-IGBT--1190

    		 Nuevo y original
    FGA15N120ANDTU

    Mfr.#: FGA15N120ANDTU

    OMO.#: OMO-FGA15N120ANDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 24A 200W TO3P
    FGA15N120ANTD FGA25N120A

    Mfr.#: FGA15N120ANTD FGA25N120A

    OMO.#: OMO-FGA15N120ANTD-FGA25N120A-1190

    		 Nuevo y original
    FGA15N120ANTD,FGA15N120A

    Mfr.#: FGA15N120ANTD,FGA15N120A

    OMO.#: OMO-FGA15N120ANTD-FGA15N120A-1190

    		 Nuevo y original
    FGA15N120ANTDTU

    Mfr.#: FGA15N120ANTDTU

    OMO.#: OMO-FGA15N120ANTDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 30A 186W TO3P
    FGA15N120ANTDTU,FGA15N12

    Mfr.#: FGA15N120ANTDTU,FGA15N12

    OMO.#: OMO-FGA15N120ANTDTU-FGA15N12-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de FGA15N120ANTDTU_F109 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,94 US$
    1,94 US$
    10
    1,84 US$
    18,38 US$
    100
    1,74 US$
    174,15 US$
    500
    1,64 US$
    822,40 US$
    1000
    1,55 US$
    1 548,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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