AS4C32M16SB-7TCNTR

AS4C32M16SB-7TCNTR
Mfr. #:
AS4C32M16SB-7TCNTR
Fabricante:
Alliance Memory
Descripción:
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C32M16SB-7TCNTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM
Serie:
AS4C32M16SB
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C32M16SB-7, AS4C32M16SB, AS4C32M16S, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
DRAM Chip SDRAM 512M-Bit 32M X 16 3.3V 54-Pin TSOP-II T/R
***metry Electronics
SDRAM 512MB 143MHz 3.3V 32M x 16 54pin TSOP II
***i-Key
IC DRAM 512M PARALLEL 54TSOP
Imagen Parte # Descripción
AS4C32M16SA-7BINTR

Mfr.#: AS4C32M16SA-7BINTR

OMO.#: OMO-AS4C32M16SA-7BINTR

DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
AS4C32M16D3L-12BCN

Mfr.#: AS4C32M16D3L-12BCN

OMO.#: OMO-AS4C32M16D3L-12BCN

DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
AS4C32M16MSA-6BIN

Mfr.#: AS4C32M16MSA-6BIN

OMO.#: OMO-AS4C32M16MSA-6BIN

DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
AS4C32M16SA-7BCN

Mfr.#: AS4C32M16SA-7BCN

OMO.#: OMO-AS4C32M16SA-7BCN

DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
AS4C32M16MD1-5BIN

Mfr.#: AS4C32M16MD1-5BIN

OMO.#: OMO-AS4C32M16MD1-5BIN

DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
AS4C32M16D1-5TIN

Mfr.#: AS4C32M16D1-5TIN

OMO.#: OMO-AS4C32M16D1-5TIN

DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
AS4C32M16MS-6BIN

Mfr.#: AS4C32M16MS-6BIN

OMO.#: OMO-AS4C32M16MS-6BIN-230

DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
AS4C32M16MD1-5BINTR

Mfr.#: AS4C32M16MD1-5BINTR

OMO.#: OMO-AS4C32M16MD1-5BINTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 60FBGA
AS4C32M16D2-25BCNTR

Mfr.#: AS4C32M16D2-25BCNTR

OMO.#: OMO-AS4C32M16D2-25BCNTR-ALLIANCE-MEMORY

DRAM 512M, 1.8V, 32M x 16 DDR2
AS4C32M16D2-25BCN

Mfr.#: AS4C32M16D2-25BCN

OMO.#: OMO-AS4C32M16D2-25BCN-ALLIANCE-MEMORY

DRAM 512M, 1.8V, 32M x 16 DDR2
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de AS4C32M16SB-7TCNTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • TMC 8 Series UL 489 Thermal-Magnetic Circuit Break
    Phoenix Contact's TMC 8 series is comprised of 1-pole, 2-pole, and 3-pole thermal-magnetic miniature circuit breakers (MCBs) in accordance with UL 489 and EN 60947-2 for DIN rail-mounted appli
  • Compare AS4C32M16SB-7TCNTR
    AS4C32M16SB7TCN vs AS4C32M16SB7TCNTR vs AS4C32M16SB7TIN
  • SAMA5D2 Family of MPUs and Eval Board
    Microchip’s SAMA5D2 Xplained Ultra is a fast prototyping and evaluation platform for the Atmel SMART SAMA5D2 series Arm® Cortex®-A5 processor based microprocessors.
  • PAN1026A Comprehensive Embedded Dual Mode Bluetoot
    Panasonic offers the PAN1026A comprehensive embedded dual mode Bluetooth® 4.2 RF module for electronic logging devices, gaming, and industrial applications.
  • NCP1244/46
    Featuring Dynamic Self-Supply the NCP1244 and NCP1246 are new fixed-frequency current-mode controllers from ON Semiconductor.
  • N-Channel SuperFET® II MOSFET
    Tailored to minimize conduction loss, provide superior switching performance and suitable for various AC / DC power conversions from On Semiconductor.
Top