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S25FL128SDPBHB210VCX

S25FL128SDPBHB210VCX
Mfr. #:
S25FL128SDPBHB210VCX
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash IC 128 Mb FLASHMEM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL128SDPBHB210VCX Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
S25FL128SDPBHB210VCX más información S25FL128SDPBHB210VCX Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-24
Serie:
S25FL128S
Tamaño de la memoria:
128 Mbit
Frecuencia máxima de reloj:
66 MHz
Tipo de interfaz:
SPI
Organización:
16 M x 8
Tipo de tiempo:
Asincrónico
Ancho del bus de datos:
8 bit
Voltaje de suministro - Min:
2.7 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
100 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 105 C
Calificación:
AEC-Q100
Embalaje:
Bandeja
Velocidad:
66 MHz
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
338
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit
Tags
S25FL128SDPBHB2, S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
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Mfr.#: S25FL128SDPMFV001

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Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de S25FL128SDPBHB210VCX es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
338
4,27 US$
1 443,26 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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