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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Parte # | Mfg. | Descripción | Valores | Precio |
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IPI051N15N5AKSA1 DISTI # V36:1790_16141096 | Infineon Technologies AG | 150V N-Channel MOSFET | 0 |
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IPI051N15N5AKSA1 DISTI # IPI051N15N5AKSA1-ND | Infineon Technologies AG | MV POWER MOS RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
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IPI051N15N5AKSA1 DISTI # IPI051N15N5AKSA1 | Infineon Technologies AG | DIFFERENTIATED MOSFETS - Rail/Tube (Alt: IPI051N15N5AKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
IPI051N15N5AKSA1 DISTI # SP001326440 | Infineon Technologies AG | DIFFERENTIATED MOSFETS (Alt: SP001326440) RoHS: Compliant Min Qty: 1 | Europe - 0 |
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IPI051N15N5AKSA1 DISTI # SP001326440 | Infineon Technologies AG | DIFFERENTIATED MOSFETS (Alt: SP001326440) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
IPI051N15N5AKSA1 DISTI # 726-IPI051N15N5AKSA1 | Infineon Technologies AG | MOSFET RoHS: Compliant | 250 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: IPI051N15N5 OMO.#: OMO-IPI051N15N5-1190 |
Nuevo y original | |
Mfr.#: IPI052NE7N3 OMO.#: OMO-IPI052NE7N3-1190 |
Nuevo y original | |
Mfr.#: IPI052NE7N3G OMO.#: OMO-IPI052NE7N3G-1190 |
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
Mfr.#: IPI052NE7N3G,052NE7N, |
Nuevo y original | |
Mfr.#: IPI057N08N3 G |
MOSFET N-CH 80V 80A TO262-3 | |
Mfr.#: IPI05CN10N G |
MOSFET N-CH 100V 100A TO262-3 | |
Mfr.#: IPI05CNE8N G OMO.#: OMO-IPI05CNE8N-G-1190 |
MOSFET N-Ch 85V 100A I2PAK-3 | |
Mfr.#: IPI05CNE8NG OMO.#: OMO-IPI05CNE8NG-1190 |
Nuevo y original | |
Mfr.#: IPI05N03LA |
MOSFET N-CH 25V 80A I2PAK | |
Mfr.#: IPI052NE7N3 G |
IGBT Transistors MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 |