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FDP8874

FDP8874
Mfr. #:
FDP8874
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V 114A 5.3 OHM N-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP8874 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDP8874 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
114 A
Rds On - Resistencia de la fuente de drenaje:
3.6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
110 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FDP8874
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
31 ns
Tipo de producto:
MOSFET
Hora de levantarse:
128 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
44 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
FDP8874_NL
Unidad de peso:
0.063493 oz
Tags
FDP8874, FDP887, FDP88, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ow.cn
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:470A; SMD Marking:IRL3803VPBF; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
***emi
Power MOSFET 85 Amps, 28 Volts
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:28V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):6.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDP8874
DISTI # V99:2348_06300762		ON Semiconductor30V N-CHANNEL POWERTRENCH&#174600
  • 10000:$0.5571
  • 2500:$0.5880
  • 1000:$0.6371
  • 500:$0.8381
  • 100:$0.9287
  • 10:$1.2170
  • 1:$1.5873
FDP8874
DISTI # V36:1790_06300762		ON Semiconductor30V N-CHANNEL POWERTRENCH&#1740
    FDP8874
    DISTI # FDP8874FS-ND    		ON SemiconductorMOSFET N-CH 30V 114A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		818In Stock
    • 5600:$0.6184
    • 3200:$0.6509
    • 800:$0.8834
    • 100:$1.0694
    • 25:$1.3020
    • 10:$1.3720
    • 1:$1.5300
    FDP8874
    DISTI # 30345292    		ON Semiconductor30V N-CHANNEL POWERTRENCH&#174600
    • 12:$1.5873
    FDP8874
    DISTI # FDP8874    		ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 391
    Container: Bulk    		Americas - 0
    • 3910:$0.7899
    • 1955:$0.8099
    • 1173:$0.8199
    • 782:$0.8309
    • 391:$0.8359
    FDP8874
    DISTI # FDP8874    		ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€0.4779
    • 500:€0.5149
    • 100:€0.5579
    • 50:€0.6079
    • 25:€0.6689
    • 10:€0.7439
    • 1:€0.8369
    FDP8874
    DISTI # FDP8874    		ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Americas - 0
    • 8000:$0.8759
    • 4000:$0.8979
    • 2400:$0.9099
    • 1600:$0.9219
    • 800:$0.9279
    FDP8874
    DISTI # 60J0602    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,16A I(D),TO-220AB ROHS COMPLIANT: YES0
    • 50000:$0.5940
    • 24000:$0.6080
    • 10000:$0.6250
    • 2000:$0.6610
    • 1000:$0.6650
    • 100:$0.9750
    • 10:$1.2500
    • 1:$1.6000
    FDP8874
    DISTI # 512-FDP8874    		ON SemiconductorMOSFET 30V 114A 5.3 OHM N-CH
    RoHS: Compliant    		2217
    • 1:$1.4600
    • 10:$1.2400
    • 100:$0.9530
    • 500:$0.8420
    • 1000:$0.6650
    • 2500:$0.5890
    • 10000:$0.5670
    FDP8874Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2591
    • 1000:$0.8400
    • 500:$0.8900
    • 100:$0.9200
    • 25:$0.9600
    • 1:$1.0400
    FDP8874
    DISTI # 6714878P    		ON SemiconductorMOSFET N-CHANNEL 30V 16A TO220AB, TU950
    • 500:£0.6320
    • 250:£0.7160
    • 50:£0.8220
    • 25:£0.9260
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    Mfr.#: C503B-RAN-CZ0C0AA1

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    		 Standard LEDs - Through Hole Red Round
    WP154A4SEJ3VBDZGW/CA

    Mfr.#: WP154A4SEJ3VBDZGW/CA

    OMO.#: OMO-WP154A4SEJ3VBDZGW-CA

    		 Standard LEDs - Through Hole 5MM RGB LED
    2465

    Mfr.#: 2465

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    		 Interface Modules Rechargeable 5V Lipo USB Boost
    PMR10EZPJV2L0

    Mfr.#: PMR10EZPJV2L0

    OMO.#: OMO-PMR10EZPJV2L0-ROHM-SEMI

    		 RES 0.002 OHM 5% 1/2W 0805
    26-60-4020

    Mfr.#: 26-60-4020

    OMO.#: OMO-26-60-4020-410

    		 Headers & Wire Housings VERT PCB HDR 2P TIN FRICTION LOCK
    2465

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    OMO.#: OMO-2465-KEYSTONE-ELECTRONICS

    		 Battery Holders, Clips & Contacts Cylindrical Battery Contacts, Clips, Holders & Springs AA Battery. HOLDER 6" LEADS
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de FDP8874 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,46 US$
    1,46 US$
    10
    1,24 US$
    12,40 US$
    100
    0,95 US$
    95,30 US$
    500
    0,84 US$
    421,00 US$
    1000
    0,66 US$
    665,00 US$
    2500
    0,59 US$
    1 472,50 US$
    10000
    0,57 US$
    5 670,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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