OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPS80R900P7AKMA1

IPS80R900P7AKMA1
Mfr. #:
IPS80R900P7AKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPS80R900P7AKMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPS80R900P7AKMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
IPAK-SL-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
770 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
15 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
45 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
IPS80R900P7 SP001633526
Tags
IPS80R, IPS80, IPS8, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 900 mOhm 15 nC CoolMOS™ Power Mosfet - TO-251
***ark
Mosfet, N-Ch, 800V, 6A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.77Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Parte # Mfg. Descripción Valores Precio
IPS80R900P7AKMA1
DISTI # IPS80R900P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 800V COOLMOS TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 6000:$0.5222
  • 3000:$0.5496
  • 1500:$0.5889
  • 100:$0.9030
  • 25:$1.0992
  • 10:$1.1580
  • 1:$1.3000
IPS80R900P7AKMA1
DISTI # IPS80R900P7AKMA1		Infineon Technologies AGPower MOSFET N-Channel 800V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPS80R900P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.4749
  • 9000:$0.4829
  • 6000:$0.4999
  • 3000:$0.5189
  • 1500:$0.5379
IPS80R900P7AKMA1
DISTI # SP001633526		Infineon Technologies AGPower MOSFET N-Channel 800V 6A 3-Pin TO-251 Tube (Alt: SP001633526)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.4809
  • 450:€0.5129
  • 300:€0.5889
  • 150:€0.7049
  • 75:€0.8409
IPS80R900P7AKMA1
DISTI # 726-IPS80R900P7AKMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		7
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.8040
  • 500:$0.7110
  • 1000:$0.5610
  • 2500:$0.4980
  • 10000:$0.4790
IPS80R900P7AKMA1
DISTI # 2771337		Infineon Technologies AGMOSFET, N-CH, 800V, 6A, TO-251
RoHS: Compliant		0
  • 6000:$0.7890
  • 3000:$0.8290
  • 1500:$0.8880
  • 100:$1.3700
  • 25:$1.6600
  • 10:$1.7500
  • 1:$1.9600
IPS80R900P7AKMA1
DISTI # 2771337		Infineon Technologies AGMOSFET, N-CH, 800V, 6A, TO-2510
  • 500:£0.5430
  • 250:£0.5780
  • 100:£0.6130
  • 10:£0.8490
  • 1:£1.0700
Imagen Parte # Descripción
IPS80R900P7AKMA1

Mfr.#: IPS80R900P7AKMA1

OMO.#: OMO-IPS80R900P7AKMA1

 MOSFET
IPS80R900P7AKMA1

Mfr.#: IPS80R900P7AKMA1

OMO.#: OMO-IPS80R900P7AKMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V COOLMOS TO251-3
Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de IPS80R900P7AKMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,22 US$
1,22 US$
10
1,04 US$
10,40 US$
100
0,80 US$
80,40 US$
500
0,71 US$
355,50 US$
1000
0,56 US$
561,00 US$
2500
0,50 US$
1 245,00 US$
10000
0,48 US$
4 790,00 US$
25000
0,46 US$
11 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top