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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RFB18N10CSVM DISTI # RFB18N10CSVM | Renesas Electronics Corporation | - Bulk (Alt: RFB18N10CSVM) RoHS: Not Compliant Min Qty: 146 Container: Bulk | Americas - 0 |
|
| RFB18N10CS | Harris Semiconductor | Power Field-Effect Transistor, 18A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TS-001AA RoHS: Not Compliant | 1876 |
|
| RFB18N10CSVM | Harris Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 49 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: RFB18N10CS OMO.#: OMO-RFB18N10CS-1190 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TS-001AA |
