IXFX120N30P3

IXFX120N30P3
Mfr. #:
IXFX120N30P3
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFX120N30P3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IXFX120N30P3 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFX120N30
embalaje
Tubo
Unidad de peso
0.056438 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Drenaje doble simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.13 kW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
13 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
300 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
27 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
60 ns
Tiempo de retardo de encendido típico
26 ns
Qg-Gate-Charge
150 nC
Transconductancia directa-Mín.
54 S
Modo de canal
Mejora
Tags
IXFX120, IXFX12, IXFX1, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 300V 120A TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFX120N30P3
DISTI # IXFX120N30P3-ND
IXYS CorporationMOSFET N-CH 300V 120A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
71In Stock
  • 510:$8.0910
  • 120:$9.4860
  • 30:$10.3230
  • 10:$11.1600
  • 1:$12.2800
IXFX120N30P3
DISTI # 747-IXFX120N30P3
IXYS CorporationMOSFET N-Channel: Power MOSFET w/Fast Diode200
  • 1:$14.1200
  • 10:$12.8300
  • 25:$11.8700
  • 50:$10.9200
  • 100:$10.6500
  • 250:$9.7700
  • 500:$8.8600
IXFX120N30P3
DISTI # 8024492P
IXYS CorporationMOSFET 300V 120A POLAR3 HIPERFET PLUS247, TU2
  • 200:£5.9000
  • 100:£6.3600
  • 50:£6.8100
  • 10:£7.4500
Imagen Parte # Descripción
IXFX120N30T

Mfr.#: IXFX120N30T

OMO.#: OMO-IXFX120N30T

MOSFET 120V 300V
IXFX120N25P

Mfr.#: IXFX120N25P

OMO.#: OMO-IXFX120N25P

MOSFET 120 Amps 250 V 0.24 Ohm Rds
IXFX120N20

Mfr.#: IXFX120N20

OMO.#: OMO-IXFX120N20

MOSFET 200V 120A
IXFX120N65X2

Mfr.#: IXFX120N65X2

OMO.#: OMO-IXFX120N65X2-IXYS-CORPORATION

MOSFET N-CH 650V 120A PLUS247
IXFX12N90Q

Mfr.#: IXFX12N90Q

OMO.#: OMO-IXFX12N90Q-IXYS-CORPORATION

MOSFET N-CH 900V 12A PLUS247
IXFX120N25P

Mfr.#: IXFX120N25P

OMO.#: OMO-IXFX120N25P-IXYS-CORPORATION

Darlington Transistors MOSFET 120 Amps 250 V 0.24 Ohm Rds
IXFX120N30T

Mfr.#: IXFX120N30T

OMO.#: OMO-IXFX120N30T-IXYS-CORPORATION

Darlington Transistors MOSFET 120V 300V
IXFX120N25

Mfr.#: IXFX120N25

OMO.#: OMO-IXFX120N25-IXYS-CORPORATION

MOSFET 120 Amps 250V 0.022 Rds
IXFX120N30P3

Mfr.#: IXFX120N30P3

OMO.#: OMO-IXFX120N30P3-IXYS-CORPORATION

IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
IXFX120N20

Mfr.#: IXFX120N20

OMO.#: OMO-IXFX120N20-IXYS-CORPORATION

MOSFET 200V 120A
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IXFX120N30P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,14 US$
12,14 US$
10
11,53 US$
115,30 US$
100
10,92 US$
1 092,29 US$
500
10,32 US$
5 158,00 US$
1000
9,71 US$
9 709,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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