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BGA735N16E6327XTSA1

BGA735N16E6327XTSA1
Mfr. #:
BGA735N16E6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
IC AMP UMTS 800MHZ 900MHZ TSNP16
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BGA735N16E6327XTSA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
BGA735N16E, BGA735N, BGA735, BGA73, BGA7, BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
RF Amp Chip Triple General Purpose Amplifier 2.62GHz 3V 16-Pin TSNP EP T/R
***ineon SCT
The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700MHz) low noise amplifier MMIC for worldwide use, TSNP-16-1, RoHS
***ineon
The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineons proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. | Summary of Features: Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands); Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode(800 MHz / 1900 MHz / 2100 MHz); Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands); Standby mode (< 2 A typ.); Output internally matched to 50 ; Inputs pre-matched to 50 ; 2kV HBM ESD protection; Low external component count; Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm); Pb-free (RoHS compliant) package | Target Applications: LNA for LTE and 3G systems
Parte # Mfg. Descripción Valores Precio
BGA735N16E6327XTSA1
DISTI # BGA735N16E6327XTSA1CT-ND		Infineon Technologies AGIC AMP UMTS 800MHZ 900MHZ TSNP16
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7426In Stock
  • 1000:$0.8978
  • 500:$1.0836
  • 250:$1.2384
  • 100:$1.3932
  • 25:$1.5480
  • 10:$1.7340
  • 1:$1.9200
BGA735N16E6327XTSA1
DISTI # BGA735N16E6327XTSA1DKR-ND		Infineon Technologies AGIC AMP UMTS 800MHZ 900MHZ TSNP16
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7426In Stock
  • 1000:$0.8978
  • 500:$1.0836
  • 250:$1.2384
  • 100:$1.3932
  • 25:$1.5480
  • 10:$1.7340
  • 1:$1.9200
BGA735N16E6327XTSA1
DISTI # BGA735N16E6327XTSA1TR-ND		Infineon Technologies AGIC AMP UMTS 800MHZ 900MHZ TSNP16
RoHS: Compliant
Min Qty: 7500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 7500:$0.7666
BGA735N16E6327XTSA1
DISTI # SP000659248		Infineon Technologies AGRF Amp Chip Triple General Purpose Amplifier 2.62GHz 3V 16-Pin TSNP EP T/R (Alt: SP000659248)
RoHS: Compliant
Min Qty: 7500
Container: Tape and Reel		Europe - 7500
  • 75000:€0.6739
  • 45000:€0.7249
  • 30000:€0.7859
  • 15000:€0.8569
  • 7500:€1.0479
BGA735N16E6327XTSA1
DISTI # BGA735N16E6327XTSA1		Infineon Technologies AGRF Amp Chip Triple General Purpose Amplifier 2.62GHz 3V 16-Pin TSNP EP T/R - Tape and Reel (Alt: BGA735N16E6327XTSA1)
RoHS: Compliant
Min Qty: 7500
Container: Reel		Americas - 0
  • 75000:$0.7489
  • 45000:$0.7619
  • 30000:$0.7889
  • 15000:$0.8189
  • 7500:$0.8489
BGA 735N16 E6327
DISTI # 726-BGA735N16E6327		Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant		0
  • 7500:$0.7380
BGA735N16E6327XTSA1
DISTI # XSKDRABV0044650		Infineon Technologies AGSmallSignalBipolarTransistor,0.1AI(C),30VV(BR)CEO,1-Element,PNP,Silicon,TO-236AB
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.9893
  • 7500:$1.0600
Imagen Parte # Descripción
BGA735N16

Mfr.#: BGA735N16

OMO.#: OMO-BGA735N16-TDK

 Nuevo y original
BGA735N16 E6327

Mfr.#: BGA735N16 E6327

OMO.#: OMO-BGA735N16-E6327-1190

 Nuevo y original
BGA735N16,E6327

Mfr.#: BGA735N16,E6327

OMO.#: OMO-BGA735N16-E6327-INFINEON-TECHNOLOGIES

 Nuevo y original
BGA735N16E6327

Mfr.#: BGA735N16E6327

OMO.#: OMO-BGA735N16E6327-1190

 Nuevo y original
BGA735N16E6327XTSA1

Mfr.#: BGA735N16E6327XTSA1

OMO.#: OMO-BGA735N16E6327XTSA1-INFINEON-TECHNOLOGIES

 IC AMP UMTS 800MHZ 900MHZ TSNP16
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de BGA735N16E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,12 US$
1,12 US$
10
1,07 US$
10,67 US$
100
1,01 US$
101,10 US$
500
0,95 US$
477,40 US$
1000
0,90 US$
898,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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