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VN1206L-G-P002

VN1206L-G-P002
Mfr. #:
VN1206L-G-P002
Fabricante:
Microchip Technology
Descripción:
MOSFET N-CH Enhancmnt Mode MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
VN1206L-G-P002 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
VN1206L-G-P002 más información VN1206L-G-P002 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
120 V
Id - Corriente de drenaje continua:
230 mA
Rds On - Resistencia de la fuente de drenaje:
10 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Marca:
Tecnología de microchip
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
8 ns
Unidad de peso:
0.016000 oz
Tags
VN1206L-G, VN1206L, VN1206, VN120, VN12, VN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 120V, 6.0 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 120V 0.23A 3-Pin TO-92 Bag
***rochip SCT
Enhancement-Mode N-Channel, 6Ω, 2V, TO-92-3, RoHS
*** Electronic Components
MOSFET N-CH Enhancmnt Mode MOSFET
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Source Electronics
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | MOSFET N-CH 100V 200MA TO92-3
***ical
Trans MOSFET N-CH 100V 0.2A Automotive 3-Pin E-Line
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):10ohm; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2A
Parte # Mfg. Descripción Valores Precio
VN1206L-G-P002
DISTI # VN1206L-G-P002-ND		Microchip Technology IncMOSFET N-CH 120V 0.23A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.2360
VN1206L-G-P002
DISTI # VN1206L-G-P002		Microchip Technology IncTrans MOSFET N-CH 120V 0.23A 3-Pin TO-92 Bag - Tape and Reel (Alt: VN1206L-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.7609
  • 12000:$0.7729
  • 8000:$0.7969
  • 4000:$0.8239
  • 2000:$0.8519
VN1206L-G-P002
DISTI # 53Y4319		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 120V, 6.0 OHM 3 TO-92 RVT/R0
  • 100:$1.2400
  • 25:$1.3600
  • 1:$1.6400
VN1206L-G-P002
DISTI # 70483882		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,120V,6.0 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$1.1840
VN1206L-G-P002
DISTI # 689-VN1206L-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		1885
  • 1:$1.6200
  • 10:$1.6000
  • 25:$1.3500
  • 100:$1.2300
  • 250:$1.0800
  • 500:$0.9270
  • 1000:$0.8440
  • 2000:$0.8440
  • 4000:$0.7710
  • 10000:$0.7500
VN1206L-G-P002
DISTI # VN1206L-G-P002		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE120V6.0 Ohm
RoHS: Compliant
Min Qty: 1
Package Multiple: 1
Container: Reel		16000
  • 1000:$1.0000
  • 100:$1.2000
  • 26:$1.3200
  • 1:$1.5800
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de VN1206L-G-P002 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,62 US$
1,62 US$
10
1,60 US$
16,00 US$
25
1,35 US$
33,75 US$
100
1,23 US$
123,00 US$
250
1,08 US$
270,00 US$
500
0,93 US$
463,50 US$
1000
0,84 US$
844,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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