BSP318S E6327

BSP318S E6327
Mfr. #:
BSP318S E6327
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 60V 2.6A SOT-223
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSP318S E6327 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSP318S E6327 DatasheetBSP318S E6327 Datasheet (P4-P6)BSP318S E6327 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
SIPMOS
embalaje
Cinta y carrete (TR)
Estado de la pieza
Obsoleto
Tipo de FET
Canal N
Tecnología
MOSFET (óxido de metal)
Voltaje de drenaje a fuente (Vdss)
60V
Corriente: drenaje continuo (Id) a 25 ° C
2.6A (Ta)
Voltaje de unidad (Max Rds encendido, Min Rds encendido)
4.5V, 10V
Vgs (th) (Max) @ Id
2V @ 20A
Carga de puerta (Qg) (Max) @ Vgs
20nC @ 10V
Vgs (máx.)
±20V
Capacitancia de entrada (Ciss) (Max) @ Vds
380pF @ 25V
Característica FET
-
Disipación de energía (máx.)
1.8W (Ta)
Rds activado (máx.) @ Id, Vgs
90 mOhm @ 2.6A, 10V
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo del proveedor
PG-SOT223-4
Paquete / Estuche
TO-261-4, TO-261AA
Tags
BSP318S, BSP318, BSP31, BSP3, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSP318S E6327
DISTI # BSP318SE6327-ND
Infineon Technologies AGMOSFET N-CH 60V 2.6A SOT-223
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSP318SE6327
    DISTI # 726-BSP318SE6327
    Infineon Technologies AGMOSFET N-Ch 60V 2.6A SOT-223-3
    RoHS: Not compliant
    0
      BSP318SE6327Infineon Technologies AG 2000
        BSP318SE6327Infineon Technologies AGPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Not Compliant
        43371
          Imagen Parte # Descripción
          BSP318SH6327XTSA1

          Mfr.#: BSP318SH6327XTSA1

          OMO.#: OMO-BSP318SH6327XTSA1

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318

          Mfr.#: BSP318

          OMO.#: OMO-BSP318-1190

          Nuevo y original
          BSP318 , TEA1795T/N1 , B

          Mfr.#: BSP318 , TEA1795T/N1 , B

          OMO.#: OMO-BSP318-TEA1795T-N1-B-1190

          Nuevo y original
          BSP318S

          Mfr.#: BSP318S

          OMO.#: OMO-BSP318S-1190

          MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,
          BSP318S E6327

          Mfr.#: BSP318S E6327

          OMO.#: OMO-BSP318S-E6327-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 2.6A SOT-223
          BSP318S H6327

          Mfr.#: BSP318S H6327

          OMO.#: OMO-BSP318S-H6327-1190

          Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
          BSP318S L6327

          Mfr.#: BSP318S L6327

          OMO.#: OMO-BSP318S-L6327-1190

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318S-E6327

          Mfr.#: BSP318S-E6327

          OMO.#: OMO-BSP318S-E6327-1190

          INSTOCK
          BSP318SE6327

          Mfr.#: BSP318SE6327

          OMO.#: OMO-BSP318SE6327-1190

          MOSFET N-Ch 60V 2.6A SOT-223-3
          BSP318SL6327

          Mfr.#: BSP318SL6327

          OMO.#: OMO-BSP318SL6327-1190

          Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de BSP318S E6327 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
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          1
          0,00 US$
          0,00 US$
          10
          0,00 US$
          0,00 US$
          100
          0,00 US$
          0,00 US$
          500
          0,00 US$
          0,00 US$
          1000
          0,00 US$
          0,00 US$
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