IRF100B201

IRF100B201
Mfr. #:
IRF100B201
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF100B201 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRF100B201 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
192 A
Rds On - Resistencia de la fuente de drenaje:
4.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
170 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
441 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Fuerte IRFET
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Ancho:
4.4 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
278 S
Otoño:
100 ns
Tipo de producto:
MOSFET
Hora de levantarse:
97 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
110 ns
Tiempo típico de retardo de encendido:
17 ns
Parte # Alias:
SP001561498
Unidad de peso:
0.211644 oz
Tags
IRF100B, IRF100, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
***et
Trans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
IRF100x201 HEXFET™ Power MOSFETs
Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRF100B201
DISTI # V99:2348_14701511
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 1:$2.0406
IRF100B201
DISTI # IRF100B201-ND
Infineon Technologies AGMOSFET N-CH 100V 192A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
4000In Stock
  • 1000:$1.3781
  • 500:$1.6632
  • 100:$2.1384
  • 10:$2.6610
  • 1:$2.9500
IRF100B201
DISTI # 30660878
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 7:$2.0406
IRF100B201
DISTI # 30155962
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1830
  • 650:$0.9501
  • 250:$0.9792
  • 50:$1.0752
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB - Rail/Tube (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$1.0079
  • 5000:$0.9719
  • 8000:$0.9369
  • 15000:$0.9049
  • 30000:$0.8889
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 1000
Asia - 0
  • 1000:$1.1340
  • 2000:$1.0874
  • 3000:$1.0727
  • 5000:$1.0309
  • 10000:$1.0177
  • 25000:$0.9922
  • 50000:$0.9680
IRF100B201
DISTI # SP001561498
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: SP001561498)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2999
  • 10:€1.1809
  • 25:€1.0829
  • 50:€1.0399
  • 100:€0.9999
  • 500:€0.9619
  • 1000:€0.9279
IRF100B201
DISTI # 12AC9745
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:192A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3134
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201
DISTI # 942-IRF100B201
Infineon Technologies AGMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
RoHS: Compliant
1779
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
450
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3134
  • 1:$3.0100
  • 10:$2.8100
  • 100:$2.4900
  • 500:$2.3500
  • 1000:$2.2300
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3412
  • 1:£2.6500
  • 10:£2.0900
  • 100:£1.6700
IRF100B201
DISTI # C1S322000590089
Infineon Technologies AGMOSFETs
RoHS: Compliant
1830
  • 1000:$1.3000
  • 500:$1.7000
  • 100:$1.8500
  • 25:$2.2500
  • 5:$2.7800
Imagen Parte # Descripción
DRV8353RHRGZT

Mfr.#: DRV8353RHRGZT

OMO.#: OMO-DRV8353RHRGZT

Motor / Motion / Ignition Controllers & Drivers 100V 3-PHASE GATE DRIVE
ESD12VD9-TP

Mfr.#: ESD12VD9-TP

OMO.#: OMO-ESD12VD9-TP

TVS Diodes / ESD Suppressors Uni-dir 10mA, 12V
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR

Switching Voltage Regulators 60 Vin,3.5 A,SD DC-DC Converter
ESD12VD9-TP

Mfr.#: ESD12VD9-TP

OMO.#: OMO-ESD12VD9-TP-1143

ESD Suppressors Uni-dir 10mA, 12V
DRV8353RHRGZT

Mfr.#: DRV8353RHRGZT

OMO.#: OMO-DRV8353RHRGZT-TEXAS-INSTRUMENTS

100-V Three-Phase Smart Gate Driver With Buck Regulator and Three Current Shunt Amplifiers
DRV8353RS-EVM

Mfr.#: DRV8353RS-EVM

OMO.#: OMO-DRV8353RS-EVM-TEXAS-INSTRUMENTS

95V BLDC MOTOR DRIVER EVM
REF3425QDBVRQ1

Mfr.#: REF3425QDBVRQ1

OMO.#: OMO-REF3425QDBVRQ1-TEXAS-INSTRUMENTS

REF3425 - 6 PPM/C IQ 95UA 2.5V FOR AUTO
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 60 Vin,3.5 A,SD DC-DC Converte
UCC28064ADR

Mfr.#: UCC28064ADR

OMO.#: OMO-UCC28064ADR-TEXAS-INSTRUMENTS

CONTROLLER WITH IMPROVED LIGHT L
UCC21520AQDWRQ1

Mfr.#: UCC21520AQDWRQ1

OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

Isolated Dual-Channel Gate Driver for Automotive
Disponibilidad
Valores:
14
En orden:
1997
Ingrese la cantidad:
El precio actual de IRF100B201 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,54 US$
2,54 US$
10
2,16 US$
21,60 US$
100
1,72 US$
172,00 US$
500
1,51 US$
755,00 US$
1000
1,25 US$
1 250,00 US$
2000
1,16 US$
2 320,00 US$
5000
1,12 US$
5 600,00 US$
10000
1,08 US$
10 800,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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