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STFH24N60M2

STFH24N60M2
Mfr. #:
STFH24N60M2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STFH24N60M2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STFH24N60M2 más información STFH24N60M2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
168 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
29 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
30 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STFH24N60M2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
920
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.003527 oz
Tags
STFH, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ure Electronics
N-Channel 600 V 190 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 18A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF
***ow.cn
Trans MOSFET N-CH 600V 19.3A 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 19.3A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R280CEXKSA1
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
*** Electronics
IPW60R190C6 Infineon MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 Tube RoHS
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,20.2A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:151W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 15A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R380CEXKSA1
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
***-Wing Technology
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube
***ark
Mosfet, N Ch, 600V, 13A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.26Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220FP-3WideCreepage MOSFETs ROHS
***nell
MOSFET, N-CH, 600V, 13A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
*** Source Electronics
MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
*** Electronics
STF18NM60N STMicroelectronics MOSFET N-Channel 600V 0.27ohm 13A MDmesh TO220FP RoHS
***ure Electronics
N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
***enic
600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Parte # Mfg. Descripción Valores Precio
STFH24N60M2
DISTI # V79:2366_22741371		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube249
  • 5000:$1.3146
  • 2500:$1.4680
  • 1000:$1.5119
  • 500:$1.6346
  • 100:$1.8420
  • 10:$2.3339
  • 1:$3.0090
STFH24N60M2
DISTI # V99:2348_17701881		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube245
  • 5000:$1.3146
  • 2500:$1.4680
  • 1000:$1.5119
  • 500:$1.6346
  • 100:$1.8420
  • 10:$2.3339
  • 1:$3.0090
STFH24N60M2
DISTI # V36:1790_16518755		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube0
    STFH24N60M2
    DISTI # 497-16596-5-ND    		STMicroelectronicsMOSFET N-CH 600V 18A TO220FP
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		144In Stock
    • 5520:$1.3160
    • 2760:$1.3324
    • 920:$1.7272
    • 100:$2.1023
    • 25:$2.4676
    • 10:$2.6160
    • 1:$2.9100
    STFH24N60M2
    DISTI # 31081665    		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube249
    • 5000:$1.4689
    • 2500:$1.5012
    • 1000:$1.5935
    • 500:$1.7572
    • 100:$2.0120
    • 10:$2.5089
    • 6:$3.2347
    STFH24N60M2
    DISTI # 25954552    		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube245
    • 5000:$1.4689
    • 2500:$1.5012
    • 1000:$1.5935
    • 500:$1.7572
    • 100:$2.0120
    • 10:$2.5089
    • 6:$3.2347
    STFH24N60M2
    DISTI # STFH24N60M2    		STMicroelectronicsTrans MOSFET N-CH 650V 18A 3-Pin TO-220FP Tube - Bulk (Alt: STFH24N60M2)
    Min Qty: 920
    Container: Bulk    		Americas - 0
    • 2760:$1.1900
    • 4600:$1.1900
    • 9200:$1.1900
    • 1840:$1.2900
    • 920:$1.3900
    STFH24N60M2
    DISTI # 92Y9451    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
    • 5000:$1.2300
    • 2500:$1.2800
    • 1000:$1.3700
    • 500:$1.6600
    • 100:$1.9000
    • 10:$2.3700
    • 1:$2.7900
    STFH24N60M2
    DISTI # 511-STFH24N60M2    		STMicroelectronicsMOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
    RoHS: Compliant    		1150
    • 1:$2.7600
    • 10:$2.3500
    • 100:$1.8800
    • 500:$1.6400
    • 1000:$1.3600
    • 2500:$1.2700
    • 5000:$1.2200
    STFH24N60M2
    DISTI # 1241108P    		STMicroelectronicsSTMICROELECTRONICSMOSFETSTFH24N60M2, TU840
    • 50:£0.8740
    STFH24N60M2
    DISTI # 2602656    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-30
    • 500:£1.2700
    • 250:£1.3600
    • 100:£1.4500
    • 10:£1.8300
    • 1:£2.4200
    STFH24N60M2
    DISTI # 2602656    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-3
    RoHS: Compliant    		0
    • 2760:$2.1400
    • 1840:$2.3000
    • 920:$2.5000
    • 100:$3.5600
    • 10:$4.4300
    • 1:$4.9000
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de STFH24N60M2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,76 US$
    2,76 US$
    10
    2,35 US$
    23,50 US$
    100
    1,88 US$
    188,00 US$
    500
    1,64 US$
    820,00 US$
    1000
    1,36 US$
    1 360,00 US$
    2500
    1,27 US$
    3 175,00 US$
    5000
    1,22 US$
    6 100,00 US$
    10000
    1,17 US$
    11 700,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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