MHT1002NR3

Mfr. #:: MHT1002NR3
Fabricante:: NXP / Freescale
Descripción:: RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: MHT1002NR3 Ficha de datos
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Más información:: MHT1002NR3 más información

Atributo del producto
Valor de atributo

Fabricante:: NXP

Categoria de producto:: Transistores RF MOSFET

RoHS:: Y

Tecnología:: Si

Ganar:: 20 dB

Potencia de salida:: 350 W

Embalaje:: Carrete

Frecuencia de operación:: 915 MHz

Escribe:: RF Power MOSFET

Marca:: NXP / Freescale

Sensible a la humedad:: Yes

Tipo de producto:: Transistores RF MOSFET

Cantidad de paquete de fábrica:: 250

Subcategoría:: MOSFET

Parte # Alias:: 935323605528

Unidad de peso:: 0.108111 oz

Tags: MHT10, MHT1, MHT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MHT1002NR3 Descripción

***escale Semiconductor: RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V

***ark: RUGGED RF POWER LDMOS TRANSISTOR, HEATING AND COOKING, 915MHz, 350W CW, 50V

***W: RF Power Transistor,915 to 915 MHz, 387 W, Typ Gain in dB is 20.7 @ 915 MHz, 48 V, LDMOS, SOT1818

*** Electronic Components: RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V

***et: Power LDMOS Transistor N-Channel 48V 350W 915MHz 5-Pin SMT T/R

***W: Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1727

***et: RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-272 W T/R

*** Semiconductors SCT: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F

***nell: RF FET, 65V, 728MHZ-960MHZ, TO-272WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-272WB; No.

***W: Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1726

*** Source Electronics: RF Amp Single Power Amp 960MHz 32V 17-Pin TO-270 W T/R / IC PWR AMP RF 900MHZ TO-270-16

*** Semiconductors SCT: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F

***nell: RF FET, 65V, 728MHZ-960MHZ, TO-270WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270WB; No. of Pins: 16Pins; Operating Temperature Max: 150°C; Product Range: MW7IC930N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ical: RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-270 W GULL T/R

***W: Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1723

*** Semiconductors SCT: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V

***W: Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720

***p One Stop Global: RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W T/R

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V

***et: RF Amp Chip Dual Power Amplifier 960MHz 714-Pin TO-270WBG T/R

***W: Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720

***p One Stop Global: RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W GULL T/R

MHT1002NR3 Más información

MHT1002N RF Power Transistor: Freescale's MHT1002N RF Power Transistor is a new cost-effective, solid-state RF power transistors specifically targeting 915MHz RF cooking applications. This device delivers highly efficient and controllable RF energy without performance degradation over time. This device is designed for operation in the harsh environments encountered with RF Heating (high vibration, RF mismatch, high temperatures). It is rated for continuous wave (CW) operation at high power and high frequencies. This offers superior thermal performance v.s. ceramic packaging and is available in a 50V low voltage operation. Typical applications include consumer microwave ovens, commercial RF heating and microwave oven applications, industrial heating.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
MHT1002NR3 DISTI # MHT1002NR3-ND	NXP Semiconductors	IC RF AMP 915MHZ OM780-4 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$211.2289
MHT1002NR3 DISTI # MHT1002NR3	NXP Semiconductors	Trans MOSFET N-CH 5-Pin SMT T/R - Tape and Reel (Alt: MHT1002NR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$215.2900 500:$206.7900 1000:$198.7900 1500:$191.4900 2500:$187.8900
MHT1002NR3 DISTI # 841-MHT1002NR3	NXP Semiconductors	RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V RoHS: Compliant	0	250:$192.0400
MHT1002NR3 DISTI # MHT1002NR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$195.6700

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: MHT1008NT1 OMO.#: OMO-MHT1008NT1	RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
	Mfr.#: MHT1006NT1 OMO.#: OMO-MHT1006NT1	RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
	Mfr.#: MHT1001HR5 OMO.#: OMO-MHT1001HR5	RF MOSFET Transistors 2.4GHZ HV6 40W
	Mfr.#: MHT1004NR3 OMO.#: OMO-MHT1004NR3	RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 300 W, 32 V
	Mfr.#: MHT1002NR3 OMO.#: OMO-MHT1002NR3	RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
	Mfr.#: MHT1000H OMO.#: OMO-MHT1000H-1190	Nuevo y original
	Mfr.#: MHT1001H OMO.#: OMO-MHT1001H-1190	Nuevo y original
	Mfr.#: MHT1004NR3 OMO.#: OMO-MHT1004NR3-NXP-SEMICONDUCTORS	RF POWER LDMOS TRANSISTOR 2450
	Mfr.#: MHT1006NT1 OMO.#: OMO-MHT1006NT1-NXP-SEMICONDUCTORS	RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
	Mfr.#: MHT1002NR3 OMO.#: OMO-MHT1002NR3-NXP-SEMICONDUCTORS	RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V

Disponibilidad

Valores:: Available
En orden:: 3000
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MHT1002NR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes