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CY7C2170KV18-550BZXC

CY7C2170KV18-550BZXC
Mfr. #:
CY7C2170KV18-550BZXC
Fabricante:
Cypress Semiconductor
Descripción:
SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CY7C2170KV18-550BZXC Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CY7C2170KV18-550BZXC más información CY7C2170KV18-550BZXC Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
512 k x 36
Tiempo de acceso:
-
Frecuencia máxima de reloj:
550 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
1.9 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
820 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
FBGA-165
Embalaje:
Bandeja
Tipo de memoria:
Volátil
Serie:
CY7C2170KV18
Escribe:
Sincrónico
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
136
Subcategoría:
Memoria y almacenamiento de datos
Tags
CY7C2170K, CY7C217, CY7C21, CY7C2, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
CY7C2170KV Series 18 Mb (1M x 18) 550 MHz 1.8 V DDR II+ SRAM - FBGA-165
***ical
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II+, 18432 Kb Density, 550 MHz Frequency, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et Europe
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Parte # Mfg. Descripción Valores Precio
CY7C2170KV18-550BZXC
DISTI # CY7C2170KV18-550BZXC-ND		Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		136In Stock
  • 136:$52.4852
  • 50:$59.9712
  • 25:$61.2536
  • 10:$62.6180
  • 1:$69.5700
CY7C2170KV18-550BZXCCypress SemiconductorDDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
RoHS: Compliant		219
  • 1000:$59.6100
  • 500:$62.7400
  • 100:$65.3200
  • 25:$68.1200
  • 1:$73.3600
CY7C2170KV18-550BZXC
DISTI # 727-7C2170KV550BZXC		Cypress SemiconductorSRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
RoHS: Compliant		0
  • 136:$50.4500
Imagen Parte # Descripción
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC

 SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC-CYPRESS-SEMICONDUCTOR

 IC SRAM 18M PARALLEL 165FBGA
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de CY7C2170KV18-550BZXC es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
65,66 US$
65,66 US$
5
59,64 US$
298,20 US$
10
56,98 US$
569,80 US$
25
56,82 US$
1 420,50 US$
50
52,58 US$
2 629,00 US$
100
50,45 US$
5 045,00 US$
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