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SIDR402DP-T1-GE3

SIDR402DP-T1-GE3
Mfr. #:
SIDR402DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIDR402DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR402DP-T1-GE3 DatasheetSIDR402DP-T1-GE3 Datasheet (P4-P6)SIDR402DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIDR402DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8DC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
1.16 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.3 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
53 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SID
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
147 S
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
100 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
56 ns
Tiempo típico de retardo de encendido:
45 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC
***roFlash
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***ark
Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descripción Valores Precio
SIDR402DP-T1-GE3
DISTI # V36:1790_21749947		Vishay IntertechnologiesN-Channel 40 V (D-S) MOSFET0
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1529
    • 3000:$1.1673
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.0529
    • 500:€1.0809
    • 100:€1.0959
    • 50:€1.1129
    • 25:€1.2539
    • 10:€1.5199
    • 1:€2.1699
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.0549
    • 30000:$1.0839
    • 18000:$1.1149
    • 12000:$1.1629
    • 6000:$1.1979
    SIDR402DP-T1-GE3
    DISTI # 59AC7336    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
    • 10000:$1.0300
    • 6000:$1.0700
    • 4000:$1.1200
    • 2000:$1.2400
    • 1000:$1.3100
    • 1:$1.3900
    SIDR402DP-T1-GE3
    DISTI # 78AC6501    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes0
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIDR402DP-T1-GE3
    DISTI # 78-SIDR402DP-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0700
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W0
    • 500:£1.0600
    • 250:£1.1400
    • 100:£1.2100
    • 10:£1.5700
    • 1:£2.1200
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$1.8900
    • 500:$2.0000
    • 250:$2.1300
    • 100:$2.3100
    • 10:$2.6600
    • 1:$3.0500
    Imagen Parte # Descripción
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    SIDR402DP

    Mfr.#: SIDR402DP

    OMO.#: OMO-SIDR402DP-1190

    		 Nuevo y original
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 40V PPSO-8DC
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SIDR402DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,55 US$
    2,55 US$
    10
    2,12 US$
    21,20 US$
    100
    1,64 US$
    164,00 US$
    500
    1,44 US$
    720,00 US$
    1000
    1,19 US$
    1 190,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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