MRF6V12250HR5

Mfr. #:: MRF6V12250HR5
Fabricante:: NXP / Freescale
Descripción:: RF MOSFET Transistors VHV6 250W 50V NI780H
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: MRF6V12250HR5 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: NXP

Categoria de producto:: Transistores RF MOSFET

RoHS:: Y

Polaridad del transistor:: Canal N

Tecnología:: Si

Vds - Voltaje de ruptura de drenaje-fuente:: 110 V

Ganar:: 20.3 dB

Potencia de salida:: 27.5 W

Temperatura máxima de funcionamiento:: + 150 C

Estilo de montaje:: SMD / SMT

Paquete / Caja:: NI-780

Embalaje:: Carrete

Configuración:: Único

Frecuencia de operación:: 0.96 GHz to 1.215 GHz

Serie:: MRF6V12250H

Escribe:: RF Power MOSFET

Marca:: NXP / Freescale

Tipo de producto:: Transistores RF MOSFET

Cantidad de paquete de fábrica:: 50

Subcategoría:: MOSFET

Vgs - Voltaje puerta-fuente:: 10 V

Vgs th - Voltaje umbral puerta-fuente:: 2.4 V

Parte # Alias:: 935310098178

Unidad de peso:: 0.226635 oz

Tags: MRF6V12250HR, MRF6V122, MRF6V12, MRF6V1, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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MRF6V12250HR5 Descripción

***W: RF Power Transistor,960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792

*** Semiconductors SCT: Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V, CFM2F, RoHS

***nell: TRANSISTOR, RF, 100V, NI-780H-2L; Drain Source Voltage Vds: 100VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1215MHz; RF Transistor Case: NI-780; No. of

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

***W: RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787

***ark: RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W

***nell: RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***W: RF Power Transistor,10 to 600 MHz, 300 W, Typ Gain in dB is 25.5 @ 220 MHz, 50 V, LDMOS, SOT1735

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: RF, MOSFET, N, 600MHZ, 300W, 4TO272; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 150mA; Power Dissipation Pd: 300W; Operating Frequency Min: 10MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-272;

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

Parte #	Mfg.	Descripción	Valores	Precio
MRF6V12250HR5 DISTI # 31603662	NXP Semiconductors	Trans RF MOSFET N-CH 100V 3-Pin Case 465-06 T/R RoHS: Compliant	87	1:$284.6000
MRF6V12250HR5 DISTI # MRF6V12250HR5CT-ND	NXP Semiconductors	FET RF 100V 1.03GHZ NI-780 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	60In Stock	10:$228.6490 1:$238.7400
MRF6V12250HR5 DISTI # MRF6V12250HR5DKR-ND	NXP Semiconductors	FET RF 100V 1.03GHZ NI-780 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	60In Stock	10:$228.6490 1:$238.7400
MRF6V12250HR5 DISTI # MRF6V12250HR5TR-ND	NXP Semiconductors	FET RF 100V 1.03GHZ NI-780 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	50In Stock	50:$268.0152
MRF6V12250HR5 DISTI # V36:1790_07204031	NXP Semiconductors	Trans RF MOSFET N-CH 100V 3-Pin Case 465-06 T/R RoHS: Compliant	0
MRF6V12250HR5 DISTI # MRF6V12250HR5	Avnet, Inc.	Trans MOSFET N-CH 100V 3-Pin NI-780 T/R (Alt: MRF6V12250HR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Europe - 0	500:€197.9900 300:€204.7900 200:€212.1900 100:€219.9900 50:€228.4900
MRF6V12250HR5 DISTI # MRF6V12250HR5	Avnet, Inc.	Trans MOSFET N-CH 100V 3-Pin NI-780 T/R - Bulk (Alt: MRF6V12250HR5) Min Qty: 2 Container: Bulk	Americas - 0	20:$217.1900 10:$221.3900 6:$229.7900 4:$239.0900 2:$248.8900
MRF6V12250HR5 DISTI # MRF6V12250HR5	Avnet, Inc.	Trans MOSFET N-CH 100V 3-Pin NI-780 T/R - Tape and Reel (Alt: MRF6V12250HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	500:$217.1900 300:$221.3900 200:$229.7900 100:$239.0900 50:$248.8900
MRF6V12250HR5 DISTI # 841-MRF6V12250HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 250W 50V NI780H RoHS: Compliant	35	1:$238.7400 5:$233.7000 10:$228.6500
MRF6V12250HR5	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	3	1000:$224.6700 500:$236.5000 100:$246.2200 25:$256.7700 1:$276.5200
MRF6V12250HR5 DISTI # 2776267	NXP Semiconductors	TRANSISTOR, RF, 100V, NI-780H-2L RoHS: Compliant	59	5:$370.7200 1:$383.5100
MRF6V12250HR5 DISTI # 2776267	NXP Semiconductors	TRANSISTOR, RF, 100V, NI-780H-2L	59	5:£173.0000 1:£181.0000
MRF6V12250HR5 DISTI # MRF6V12250HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	87	1:$235.3500 10:$229.1600 25:$226.1900

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Disponibilidad

Valores:: Available
En orden:: 1991
Ingrese la cantidad:

El precio actual de MRF6V12250HR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~238,74 US$~~; ~~238,74 US$~~

5: ~~233,70 US$~~; ~~1 168,50 US$~~

10: ~~228,65 US$~~; ~~2 286,50 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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MRF6V12250HR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes