FCP4N60

FCP4N60
Mfr. #:
FCP4N60
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V N-Chl MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCP4N60 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
3.9 A
Rds On - Resistencia de la fuente de drenaje:
1 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
50 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FCP4N60
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
3.2 S
Otoño:
30 ns
Tipo de producto:
MOSFET
Hora de levantarse:
45 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
36 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.063493 oz
Tags
FCP4, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 3.9 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP4N60
***itex
Transistor N-MOSFET FCP4N60, TO-220AB, Fairchild
***ure Electronics
N-Channel 600 V 1.2 Ohm Flange Mount SuperFET Mosfet - TO-220
***p One Stop Global
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Tube
***i-Key
MOSFET N-CH 600V 3.9A TO-220
***inecomponents.com
600V, NCH MOSFET
***ark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:3.9A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:3.9A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:11.7A; No. of Pins:3; Power Dissipation:50mW; Voltage, Vds Max:600V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***th Star Micro
SuperFET is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Parte # Mfg. Descripción Valores Precio
FCP4N60
DISTI # V99:2348_06359224
ON Semiconductor600V, NCH MOSFET485
  • 5000:$0.5500
  • 3000:$0.6099
  • 1000:$0.6872
  • 100:$0.9821
  • 25:$1.2760
  • 10:$1.2781
  • 1:$1.6417
FCP4N60
DISTI # V36:1790_06359224
ON Semiconductor600V, NCH MOSFET0
  • 1000000:$0.5550
  • 500000:$0.5573
  • 100000:$0.7401
  • 10000:$1.0490
  • 1000:$1.1000
FCP4N60
DISTI # FCP4N60-ND
ON SemiconductorMOSFET N-CH 600V 3.9A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1027In Stock
  • 5000:$0.6413
  • 3000:$0.6750
  • 1000:$0.7232
  • 100:$1.1090
  • 25:$1.3500
  • 10:$1.4220
  • 1:$1.5900
FCP4N60
DISTI # 32903950
ON Semiconductor600V, NCH MOSFET1000
  • 1000:$0.5328
FCP4N60
DISTI # 27580813
ON Semiconductor600V, NCH MOSFET485
  • 12:$1.6417
FCP4N60
DISTI # FCP4N60
ON SemiconductorTrans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FCP4N60)
Min Qty: 447
Container: Bulk
Americas - 0
  • 4470:$0.6909
  • 2235:$0.7079
  • 1341:$0.7169
  • 894:$0.7269
  • 447:$0.7319
FCP4N60
DISTI # FCP4N60
ON SemiconductorTrans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP4N60)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.4959
  • 500:€0.5339
  • 100:€0.5779
  • 50:€0.6309
  • 25:€0.6939
  • 10:€0.7709
  • 1:€0.8679
FCP4N60
DISTI # FCP4N60
ON SemiconductorTrans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP4N60)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.8639
  • 6000:$0.8859
  • 4000:$0.8969
  • 2000:$0.9089
  • 1000:$0.9149
FCP4N60
DISTI # 61M6170
ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:50mW,MSL:- RoHS Compliant: Yes389
  • 10000:$0.7050
  • 2500:$0.7290
  • 1000:$0.8070
  • 500:$0.9930
  • 100:$1.1100
  • 10:$1.4100
  • 1:$1.6300
FCP4N60
DISTI # 512-FCP4N60
ON SemiconductorMOSFET 600V N-Chl MOSFET
RoHS: Compliant
1054
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9880
  • 500:$0.8730
  • 1000:$0.6890
  • 2000:$0.6110
  • 10000:$0.5880
FCP4N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
5185
  • 1000:$0.7000
  • 500:$0.7300
  • 100:$0.7600
  • 25:$0.8000
  • 1:$0.8600
FCP4N60
DISTI # 7598911
ON SemiconductorMOSFET N-CH 600V 3.9A SUPERFET TO220AB, PK490
  • 10:£0.4350
  • 2:£0.4500
FCP4N60
DISTI # 1495236
ON SemiconductorMOSFET, N, TO-220
RoHS: Compliant
389
  • 10000:$0.9040
  • 2000:$0.9400
  • 1000:$1.0700
  • 500:$1.3500
  • 100:$1.5200
  • 10:$1.9800
  • 1:$2.3300
FCP4N60
DISTI # 1495236
ON SemiconductorMOSFET, N, TO-220964
  • 500:£0.5990
  • 250:£0.6390
  • 100:£0.6790
  • 25:£0.8880
  • 5:£1.0900
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FCP4N60 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,51 US$
1,51 US$
10
1,29 US$
12,90 US$
100
0,99 US$
98,80 US$
500
0,87 US$
436,50 US$
1000
0,69 US$
689,00 US$
2000
0,61 US$
1 222,00 US$
10000
0,59 US$
5 880,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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