OMO ElectronicOMO Electronic
Expand menu
0 Carro

SI2315BDS-T1-GE3

SI2315BDS-T1-GE3
Mfr. #:
SI2315BDS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 12V 3A SOT23-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2315BDS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI2315BDS-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SI2315BDS-T, SI2315B, SI2315, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 0.100 Ohm 15 nC 0.75 W Silicon SMT Mosfet - SOT-23
***ical
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:750mW; MSL:-
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2315BDS-T1-GE3
DISTI # V72:2272_09216797		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.2356
  • 1000:$0.2628
  • 500:$0.3306
  • 250:$0.3925
  • 100:$0.4086
  • 25:$0.4833
  • 10:$0.5907
  • 1:$0.7277
SI2315BDS-T1-GE3
DISTI # V36:1790_09216797		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2318
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10193In Stock
  • 1000:$0.2942
  • 500:$0.3677
  • 100:$0.4652
  • 10:$0.6070
  • 1:$0.6900
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10193In Stock
  • 1000:$0.2942
  • 500:$0.3677
  • 100:$0.4652
  • 10:$0.6070
  • 1:$0.6900
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.2261
  • 15000:$0.2321
  • 6000:$0.2410
  • 3000:$0.2588
SI2315BDS-T1-GE3
DISTI # 31974717		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant		15000
  • 3000:$0.1688
SI2315BDS-T1-GE3
DISTI # 31690807		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 27:$0.7277
SI2315BDS-T1-GE3
DISTI # 21306300		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant		2629
  • 265:$0.2908
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2315BDS-T1-GE3
    DISTI # SI2315BDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2315BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
      SI2315BDS-T1-GE3
      DISTI # 84R8028      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 84R8028)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
      • 1000:$0.3400
      • 500:$0.4250
      • 250:$0.4700
      • 100:$0.5150
      • 50:$0.5980
      • 25:$0.6790
      • 1:$0.8500
      SI2315BDS-T1-GE3
      DISTI # 33P5176      		Vishay IntertechnologiesP CH MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,No. of Pins:3Pins RoHS Compliant: Yes0
      • 50000:$0.2200
      • 30000:$0.2300
      • 20000:$0.2470
      • 10000:$0.2640
      • 5000:$0.2860
      • 1:$0.2930
      SI2315BDS-T1-GE3
      DISTI # 84R8028      		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:750mW RoHS Compliant: Yes2629
      • 1:$0.1890
      • 25:$0.1890
      • 50:$0.1890
      • 100:$0.1890
      • 250:$0.1890
      • 500:$0.1890
      • 1000:$0.1890
      SI2315BDS-T1-GE3
      DISTI # 781-SI2315BDS-GE3      		Vishay IntertechnologiesMOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
      RoHS: Compliant      		3586
      • 1:$0.6700
      • 10:$0.5420
      • 100:$0.4110
      • 500:$0.3400
      • 1000:$0.2720
      • 3000:$0.2460
      • 6000:$0.2290
      • 9000:$0.2210
      SI2315BDS-T1-GE3
      DISTI # 1867177      		Vishay IntertechnologiesP CHANNEL MOSFET
      RoHS: Compliant      		2979
      • 3000:$0.3720
      • 1000:$0.4100
      • 500:$0.5120
      • 100:$0.6210
      • 10:$0.8180
      • 1:$1.0100
      SI2315BDS-T1-GE3
      DISTI # 1867177      		Vishay IntertechnologiesP CHANNEL MOSFET2629
      • 250:£0.3440
      • 100:£0.3770
      • 50:£0.4370
      • 25:£0.4960
      • 1:£0.6130
      Imagen Parte # Descripción
      SI2315BDS-T1-E3

      Mfr.#: SI2315BDS-T1-E3

      OMO.#: OMO-SI2315BDS-T1-E3

      		 MOSFET 1.8V 3.2A 1.25W
      SI2315BDS-T1-GE3

      Mfr.#: SI2315BDS-T1-GE3

      OMO.#: OMO-SI2315BDS-T1-GE3

      		 MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
      SI2315BDS-T1-E3

      Mfr.#: SI2315BDS-T1-E3

      OMO.#: OMO-SI2315BDS-T1-E3-VISHAY

      		 MOSFET P-CH 12V 3A SOT23-3
      SI2315BDS-T1-GE3

      Mfr.#: SI2315BDS-T1-GE3

      OMO.#: OMO-SI2315BDS-T1-GE3-VISHAY

      		 MOSFET P-CH 12V 3A SOT23-3
      SI2315BDST1

      Mfr.#: SI2315BDST1

      OMO.#: OMO-SI2315BDST1-1190

      		 Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
      SI2315BDS-T1-E3-CUT TAPE

      Mfr.#: SI2315BDS-T1-E3-CUT TAPE

      OMO.#: OMO-SI2315BDS-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SI2315BDS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,26 US$
      0,26 US$
      10
      0,25 US$
      2,48 US$
      100
      0,23 US$
      23,45 US$
      500
      0,22 US$
      110,75 US$
      1000
      0,21 US$
      208,40 US$
      Empezar con
      Top