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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RF1S15N06SM | Harris Semiconductor | Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 4894 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: RF1S15N06 OMO.#: OMO-RF1S15N06-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S15N06SM OMO.#: OMO-RF1S15N06SM-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S15N08LSM OMO.#: OMO-RF1S15N08LSM-1190 |
Nuevo y original |
|
Mfr.#: RF1S17N06LSM OMO.#: OMO-RF1S17N06LSM-1190 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |