OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SIHG32N50D-E3

SIHG32N50D-E3
Mfr. #:
SIHG32N50D-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 500V 32A 390W 150mOhm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG32N50D-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHG32N50D-E3 más información
Atributo del producto
Valor de atributo
Tags
SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N Channel 500 V 0.15 O 390 W Flange Mount Power Mosfet - TO-247AC-3
***ical
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AC
***et Europe
Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 500V 30A TO-247AC
***ark
N-CHANNEL 500V
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHG32N50D-E3
DISTI # SIHG32N50D-E3-ND		Vishay SiliconixMOSFET N-CH 500V 30A TO-247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$3.4561
SIHG32N50D-E3
DISTI # SIHG32N50D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 30A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG32N50D-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$2.6900
  • 1000:$2.5900
  • 2000:$2.4900
  • 3000:$2.3900
  • 5000:$2.3900
SIHG32N50D-E3
DISTI # 78-SIHG32N50D-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant		0
  • 500:$3.1500
  • 1000:$2.6500
  • 2500:$2.5200
Imagen Parte # Descripción
SIHG32N50D-E3

Mfr.#: SIHG32N50D-E3

OMO.#: OMO-SIHG32N50D-E3

 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG32N50D-GE3

Mfr.#: SIHG32N50D-GE3

OMO.#: OMO-SIHG32N50D-GE3

 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG32N50D-E3

Mfr.#: SIHG32N50D-E3

OMO.#: OMO-SIHG32N50D-E3-VISHAY

 RF Bipolar Transistors MOSFET 500V 32A 390W 150mOhm @ 10V
SIHG32N50D-GE3

Mfr.#: SIHG32N50D-GE3

OMO.#: OMO-SIHG32N50D-GE3-VISHAY

 MOSFET N-CH 500V 30A TO-247AC
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SIHG32N50D-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,58 US$
3,58 US$
10
3,41 US$
34,06 US$
100
3,23 US$
322,65 US$
500
3,05 US$
1 523,65 US$
1000
2,87 US$
2 868,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Top