RJP6085DPK-00#T0

RJP6085DPK-00#T0
Mfr. #:
RJP6085DPK-00#T0
Fabricante:
Renesas Electronics
Descripción:
IGBT Transistors Power Module - Lead Free
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJP6085DPK-00#T0 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Electrónica Renesas
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Electrónica Renesas
Sensible a la humedad:
Yes
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
RJP608, RJP60, RJP6, RJP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-3P Tube
***egrated Device Technology
Insulated-Gate Bipolar Transistors (IGBT)
*** Electronic Components
IGBT Transistors Power Module - Lead Free
*** Services
CoC and 2-years warranty / RFQ for pricing
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25
***ure Electronics
IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE | Infineon IRG4BC40UPBF
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 40A 37000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
H Series 600 V 40 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
IGBT Trench gate,600V 20A/100 deg,TO220
***nell
IGBT, SINGLE, 600V, 40A, TO-220FP; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
***ark
Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***rchild Semiconductor
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***ical
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
*** Source Electronics
High current capability, High input impedance | IGBT 600V 40A 165W TO247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
Imagen Parte # Descripción
RJP6085DPN-00#T2

Mfr.#: RJP6085DPN-00#T2

OMO.#: OMO-RJP6085DPN-00-T2

IGBT Transistors Power Module - Lead Free
RJP6085DPK-00#T0

Mfr.#: RJP6085DPK-00#T0

OMO.#: OMO-RJP6085DPK-00-T0

IGBT Transistors Power Module - Lead Free
RJP6085DPK

Mfr.#: RJP6085DPK

OMO.#: OMO-RJP6085DPK-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de RJP6085DPK-00#T0 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • Infrared Human Sensor Reference Design
    Renesas’ RL78 reference design indicates human absence/presence using an infrared sensor to turn an LED on and off automatically.
  • PM2.5 Monitor with Portable Battery
    Renesas' PM2.5 monitor is a portable device that can measure and detect the concentration of atmospheric particulate matter (PM).
  • Synergy Starter Kit SK-S7G2
    Renesas Synergy™ SK-S7G2 Starter Kit is a low-cost way to access the entire Synergy Platform enabling full development using the vast majority of all SSP functions.
  • Compare RJP6085DPK-00#T0
    RJP6085DPK vs RJP6085DPK00T0 vs RJP6085DPN00T2
  • Smart Moisture Sensor
    Renesas' quick solutions feature a smart moisture sensor reference design using the RL78/G11 MCU to measure the conditions of soil and to transfer the data.
  • RPBRX65N Envision Kit
    Renesas' RPBRX65N envision kit addresses the need of microcontrollers supporting all different aspects of security like confidentiality, integrity, and availability.
Top