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IXFT24N90P

IXFT24N90P
Mfr. #:
IXFT24N90P
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFT24N90P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IXFT24N90P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFT24N90
embalaje
Tubo
Unidad de peso
0.158733 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
TO-268-2
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
660 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
38 ns
Hora de levantarse
40 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
24 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V to 6.5 V
Resistencia a la fuente de desagüe de Rds
420 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
68 ns
Tiempo de retardo de encendido típico
46 ns
Qg-Gate-Charge
130 nC
Transconductancia directa-Mín.
16 S
Modo de canal
Mejora
Tags
IXFT24, IXFT2, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 24A 3-Pin(2+Tab) TO-268
***i-Key
MOSFET N-CH TO-268
***ment14 APAC
MOSFET,N CH,900V,24A,TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:900V; On Resistance Rds(on):420mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:660W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-268; No. of Pins:3; Current Id Max:24A; Voltage Vgs Max:30V
LED Lighting Solutions
Littelfuse is committed to supporting all facets of the LED lighting market with innovative solutions that not only meet regulatory standards but also increase equipment safety and reliability. To help protect end users, Littelfuse works closely with many LED driver IC suppliers, to ensure their evaluation boards and reference designs comply with safety and surge immunity requirements. They also assist LED lighting power supply manufacturers in designing optimal protection schemes for their driver modules. At the OEM level they cooperate with luminaire and lamp manufacturers to ensure their products are optimally designed for robust surge immunity protection.
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFT24N90P
DISTI # C1S331700117874		IXYS CorporationMOSFETs
RoHS: Compliant		90
  • 50:$12.1000
  • 10:$13.2000
  • 5:$16.1000
  • 1:$18.0000
IXFT24N90P
DISTI # IXFT24N90P-ND		IXYS CorporationMOSFET N-CH TO-268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.8467
IXFT24N90P
DISTI # 747-IXFT24N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		58
  • 1:$13.4800
  • 10:$12.2600
  • 25:$11.3400
  • 50:$10.4300
  • 100:$10.1800
  • 250:$9.3300
  • 500:$8.4700
  • 1000:$7.7300
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Mfr.#: IXFT24N90P-TRL

OMO.#: OMO-IXFT24N90P-TRL

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OMO.#: OMO-IXFT24N50

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Mfr.#: IXFT20N100Q3

OMO.#: OMO-IXFT20N100Q3-1190

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Mfr.#: IXFT28N50Q

OMO.#: OMO-IXFT28N50Q-IXYS-CORPORATION

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Mfr.#: IXFT220N20X3HV

OMO.#: OMO-IXFT220N20X3HV-IXYS-CORPORATION

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IXFT26N100XHV

Mfr.#: IXFT26N100XHV

OMO.#: OMO-IXFT26N100XHV-IXYS-CORPORATION

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IXFT24N90P

Mfr.#: IXFT24N90P

OMO.#: OMO-IXFT24N90P-IXYS-CORPORATION

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IXFT23N80Q

Mfr.#: IXFT23N80Q

OMO.#: OMO-IXFT23N80Q-IXYS-CORPORATION

 MOSFET 23 Amps 800V 0.40W Rds
IXFT20N60Q

Mfr.#: IXFT20N60Q

OMO.#: OMO-IXFT20N60Q-IXYS-CORPORATION

 MOSFET 20 Amps 600V 0.35 Rds
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IXFT24N90P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,60 US$
11,60 US$
10
11,02 US$
110,15 US$
100
10,44 US$
1 043,55 US$
500
9,86 US$
4 927,90 US$
1000
9,28 US$
9 276,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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