IXFK64N50P

IXFK64N50P
Mfr. #:
IXFK64N50P
Fabricante:
Littelfuse
Descripción:
MOSFET 500V 64A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFK64N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK64N50P DatasheetIXFK64N50P Datasheet (P4)
ECAD Model:
Más información:
IXFK64N50P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-264-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
64 A
Rds On - Resistencia de la fuente de drenaje:
85 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
830 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
26.16 mm
Longitud:
19.96 mm
Serie:
IXFK64N50
Tipo de transistor:
1 N-Channel
Ancho:
5.13 mm
Marca:
IXYS
Transconductancia directa - Mín .:
50 S
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
25 ns
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
85 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
0.352740 oz
Tags
IXFK64N5, IXFK64, IXFK6, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 550 Vds 85 mOhm 830 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) TO-264AA
***ukat
N-Ch 500V 64A 830W 0,085R TO264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:64A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFK64N50P
DISTI # IXFK64N50P-ND
IXYS CorporationMOSFET N-CH 500V 64A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube
25In Stock
  • 500:$8.6290
  • 100:$10.1167
  • 25:$11.0092
  • 1:$13.0900
IXFK64N50P
DISTI # 58M7613
IXYS CorporationMOSFET, N, TO-264,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power Dissipation Pd:830W RoHS Compliant: Yes63
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 747-IXFK64N50P
IXYS CorporationMOSFET 500V 64A
RoHS: Compliant
295
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 1427314
IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant
33
  • 1:$20.8700
  • 25:$17.5500
  • 100:$16.1300
  • 500:$13.7600
IXFK64N50P
DISTI # 1427314
IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant
33
  • 1:£11.2700
  • 5:£10.7500
  • 10:£9.0400
  • 50:£8.4800
  • 100:£8.2700
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ALSR0310K00FE12

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Wirewound Resistors - Through Hole 3watt 10Kohm 1%
CRCW06032K20FKEAC

Mfr.#: CRCW06032K20FKEAC

OMO.#: OMO-CRCW06032K20FKEAC

Thick Film Resistors - SMD 1/10Watt 2.2Kohms 1% Commercial Use
292

Mfr.#: 292

OMO.#: OMO-292

Interface Development Tools i2c/SPI Character LCD Backpack
APT7M120B

Mfr.#: APT7M120B

OMO.#: OMO-APT7M120B-MICROSEMI

IGBT Transistors MOSFET
SCD30

Mfr.#: SCD30

OMO.#: OMO-SCD30-SENSIRION

CO2 SENSOR I2C/MODBUS/PWM DIGITL
Disponibilidad
Valores:
549
En orden:
2532
Ingrese la cantidad:
El precio actual de IXFK64N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,90 US$
11,90 US$
10
10,95 US$
109,50 US$
25
10,00 US$
250,00 US$
50
9,59 US$
479,50 US$
100
9,19 US$
919,00 US$
250
8,51 US$
2 127,50 US$
500
7,84 US$
3 920,00 US$
1000
7,43 US$
7 430,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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