IRFU3505PBF

Mfr. #:: IRFU3505PBF
Fabricante:: I
Descripción:: MOSFET, 55V, 71A, 13 MOHM, 62 NC QG, I-PAK
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRFU3505PBF Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: I

categoria de producto: Chips de IC

Tags: IRFU350, IRFU35, IRFU3, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU3505PBF Descripción

***ernational Rectifier: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N, 55V, 71A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.09°C/W; On State resistance @ Vgs = 10V:13ohm; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:280A; Termination Type:Through Hole; Turn Off Time:54ns; Turn On Time:74ns; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 64A;TO-247AC;PD 140W;VGS +/-20V

***ure Electronics: Single N-Channel 55 V 16 mOhm 59.3 nC HEXFET® Power Mosfet - TO247AC

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S

***eco: Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 53A/55V TO220 IRFZ 48 N PBF

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de

***ure Electronics: Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

***eco: Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF

***Yang: Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***sible Micro: RoHS|YES|MEDIX|44222|TRANS MOSFET N-CH 55V 53A 3-PI|N(3+TAB) TO-220AB|

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

***ure Electronics: N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ

***Yang: Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

***ical: Trans MOSFET N-CH 55V 66A 3-Pin (3+Tab) TO-220AB Rail

***ponent Stockers USA: 66 A 55 V 0.016 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ment14 APAC: MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:66A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:16mohm; Package / Case:TO-220AB; Power Dissipation Pd:111W; Power Dissipation Pd:111W; Voltage Vgs th Max:3V

***(Formerly Allied Electronics): IRFZ44PBF N-channel MOSFET Transistor; 50 A; 60 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 60 V 0.028 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 60V 50A 3-Pin (3+Tab) TO-220AB

***roFlash: Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CHANNEL MOSFET, 60V, 50A; Transistor P; N CHANNEL MOSFET, 60V, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRFU3505PBF DISTI # 70018373	Infineon Technologies AG	MOSFET,55V,71A,13 MOHM,62 NC QG,I-PAK RoHS: Compliant	0	675:$0.6300
IRFU3505PBF	International Rectifier	RoHS: Compliant	Europe - 525
IRFU3505PBF DISTI # 8659060	Infineon Technologies AG	MOSFET, N, 55V, 71A, I-PAK RoHS: Compliant	0	1:$1.9700 10:$1.6200 100:$1.3100 250:$1.1700 500:$1.0400 1000:$0.9660

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Disponibilidad

Valores:: Available
En orden:: 5500
Ingrese la cantidad:

El precio actual de IRFU3505PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,94 US$~~; ~~0,94 US$~~

10: ~~0,90 US$~~; ~~8,98 US$~~

100: ~~0,85 US$~~; ~~85,05 US$~~

500: ~~0,80 US$~~; ~~401,65 US$~~

1000: ~~0,76 US$~~; ~~756,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

IRFU350 5
IRFU35 7
IRFU3 67
IRFU 284
IRF 8615

IRFU3505PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes