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STGP30H60DF

STGP30H60DF
Mfr. #:
STGP30H60DF
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGP30H60DF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGP30H60DF más información STGP30H60DF Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.4 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
260 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGP30H60DF
Embalaje:
Tubo
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.081130 oz
Tags
STGP30H60, STGP30H, STGP30, STGP3, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
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***ark
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes
***th Star Micro
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STMICROELECTRONICS STGP30NC60W IGBT Single Transistor, 30 A, 2.5 V, 200 W, 600 V, TO-220, 3 Pins
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Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, N 600V 30A TO-220; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulsed Current Icm: 200A; Rise Time: 12ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
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Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-220 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Parte # Mfg. Descripción Valores Precio
STGP30H60DF
DISTI # 30592835		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		50
  • 50:$1.7723
  • 10:$2.1420
  • 9:$3.1620
STGP30H60DF
DISTI # 497-13583-5-ND		STMicroelectronicsIGBT 600V 60A 260W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.7430
  • 500:$2.0297
  • 100:$2.3494
  • 50:$2.6802
  • 1:$3.1200
STGP30H60DFB
DISTI # 497-16483-5-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.6065
  • 500:$1.9035
  • 100:$2.3985
  • 50:$2.6460
  • 1:$3.2400
STGP30H60DF
DISTI # C1S730200783396		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		50
  • 50:$1.3900
  • 10:$1.6800
  • 1:$2.4800
STGP30H60DF
DISTI # STGP30H60DF		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube (Alt: STGP30H60DF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 50
  • 1:€1.8499
  • 10:€1.1689
  • 25:€0.8819
  • 50:€0.8629
  • 100:€0.8489
  • 500:€0.8309
  • 1000:€0.8029
STGP30H60DF
DISTI # STGP30H60DF		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP30H60DF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
STGP30H60DFB
DISTI # STGP30H60DFB		STMicroelectronicsIGBTs (Alt: STGP30H60DFB)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€1.5909
  • 100:€1.3249
  • 200:€1.2229
  • 300:€1.1359
  • 500:€1.0599
STGP30H60DF
DISTI # 52AC7501		STMicroelectronicsIGBT, 600V, 60A, TO-220-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:260W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,Operating , RoHS Compliant: Yes3
  • 1:$1.7000
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0700
  • 1000:$0.9600
  • 2500:$0.7800
  • 5000:$0.7540
STGP30H60DF
DISTI # 511-STGP30H60DF		STMicroelectronicsIGBT Transistors 600V 30A High Speed Trench Gate IGBT
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
  • 1000:$1.4700
  • 2000:$1.4000
STGP30H60DFB
DISTI # 511-STGP30H60DFB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
RoHS: Compliant		2
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
  • 2000:$1.2200
STGP30H60DFSTMicroelectronicsSTGP30Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
RoHS: Compliant		500Tube
  • 5:$2.8900
  • 50:$2.5200
  • 250:$2.1400
STGP30H60DFBSTMicroelectronics 
RoHS: Compliant		Europe - 1000
    STGP30H60DF
    DISTI # STGP30H60DF    		STMicroelectronics600V 60A 260W TO220
    RoHS: Compliant    		0
    • 10:€1.6300
    • 50:€1.4300
    • 200:€1.3300
    • 500:€1.2800
    STGP30H60DFSTMicroelectronicsINSTOCK500
      STGP30H60DF
      DISTI # 2851957      		STMicroelectronicsIGBT, 600V, 60A, TO-220-3
      RoHS: Compliant      		3
      • 5:£1.9400
      • 25:£1.8300
      • 100:£1.5800
      • 250:£1.5100
      • 500:£1.3600
      STGP30H60DFB
      DISTI # 2889922      		STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-220
      RoHS: Compliant      		0
      • 1:£2.6100
      • 10:£1.8700
      • 100:£1.6900
      • 250:£1.5000
      • 500:£1.3100
      STGP30H60DF
      DISTI # XSFP00000132711      		STMicroelectronicsInsulated Gate Bipolar Transistor, 60AI(C),600VV(BR)CES, N-Channel
      RoHS: Compliant      		336
      • 35:$5.7800
      • 336:$5.2500
      STGP30H60DFSTMicroelectronics600V,30A,high speed IGBT10
      • 1:$1.2300
      • 100:$1.1300
      • 500:$1.0400
      • 1000:$0.9800
      STGP30H60DF
      DISTI # 2851957      		STMicroelectronicsIGBT, 600V, 60A, TO-220-3
      RoHS: Compliant      		3
      • 5:$3.4000
      • 25:$2.9100
      • 100:$2.2000
      • 250:$1.8500
      • 500:$1.6000
      • 1000:$1.5400
      • 5000:$1.4800
      Imagen Parte # Descripción
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      STGP30NC60W

      Mfr.#: STGP30NC60W

      OMO.#: OMO-STGP30NC60W

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      Mfr.#: STGP35N35LZ

      OMO.#: OMO-STGP35N35LZ-STMICROELECTRONICS

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      Mfr.#: STGP30H65F

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      		 IGBT Transistors Trench gte FieldStop IGBT 600V 30A
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      Mfr.#: STGP30H60DFB

      OMO.#: OMO-STGP30H60DFB-STMICROELECTRONICS

      		 TRENCH GATE FIELD-STOP IGBT, HB
      STGP3NB60HD

      Mfr.#: STGP3NB60HD

      OMO.#: OMO-STGP3NB60HD-STMICROELECTRONICS

      		 IGBT 600V 10A 50W TO220
      STGP30NC60S

      Mfr.#: STGP30NC60S

      OMO.#: OMO-STGP30NC60S-STMICROELECTRONICS

      		 IGBT 600V 55A 175W TO220
      STGP3HF60HD

      Mfr.#: STGP3HF60HD

      OMO.#: OMO-STGP3HF60HD-STMICROELECTRONICS

      		 IGBT BIPO 600V 3A TO220
      STGP3NB60H

      Mfr.#: STGP3NB60H

      OMO.#: OMO-STGP3NB60H-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de STGP30H60DF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,78 US$
      2,78 US$
      10
      2,36 US$
      23,60 US$
      100
      2,04 US$
      204,00 US$
      250
      1,94 US$
      485,00 US$
      500
      1,74 US$
      870,00 US$
      1000
      1,47 US$
      1 470,00 US$
      2000
      1,39 US$
      2 780,00 US$
      5000
      1,34 US$
      6 700,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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