NJVMJD45H11G

NJVMJD45H11G
Mfr. #:
NJVMJD45H11G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT BIP DPAK PNP 8A 80V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NJVMJD45H11G Ficha de datos
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HTML Datasheet:
NJVMJD45H11G DatasheetNJVMJD45H11G Datasheet (P4-P6)NJVMJD45H11G Datasheet (P7-P9)
ECAD Model:
Más información:
NJVMJD45H11G más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DPAK-3
Polaridad del transistor:
PNP
Voltaje colector-emisor VCEO Max:
80 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
1 V
Corriente máxima del colector de CC:
8 A
Producto de ganancia de ancho de banda fT:
90 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MJD45H11
Embalaje:
Tubo
Marca:
EN Semiconductor
Pd - Disipación de energía:
20 W
Tipo de producto:
BJT - Transistores bipolares
Calificación:
AEC-Q101
Cantidad de paquete de fábrica:
75
Subcategoría:
Transistores
Unidad de peso:
0.012346 oz
Tags
NJVMJD45, NJVMJD4, NJVMJD, NJVM, NJV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
8 A, 80 V PNP Power Bipolar Junction Transistor
***ical
Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube
***nell
TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252;
***ark
TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; DC Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
NJVMJD45H11G Bipolar Junction Transistor
ON Semiconductor NJVMJD45H11G Bipolar Junction Transistor (BJT) is a fast switching device with low collector-emitter saturation voltage. The electrical characteristics of NJVMJD45H11G transistor include: 8A current, 80V voltage, and 20W power. This transistor is electrically similar to D44H/D45H series. The NJVMJD45H11G is available in a straight lead version in plastic sleeves along with complementary pairs to simplify designs. This transistor is used for general purpose power and switching devices. The applications include switching regulators, converters, and power amplifiers.Learn more
Parte # Mfg. Descripción Valores Precio
NJVMJD45H11G
DISTI # 26621491
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant
1275
  • 1275:$0.3920
NJVMJD45H11G
DISTI # NJVMJD45H11GOS-ND
ON SemiconductorTRANS PNP 50V 8A DPAK-4
RoHS: Compliant
Min Qty: 1
Container: Tube
705In Stock
  • 5025:$0.3508
  • 2550:$0.3768
  • 525:$0.5198
  • 150:$0.6575
  • 75:$0.8056
  • 10:$0.8580
  • 1:$0.9700
NJVMJD45H11G
DISTI # V36:1790_07291333
ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant
0
    NJVMJD45H11G
    DISTI # NJVMJD45H11G
    ON SemiconductorTrans GP BJT PNP 80V 8A 3-Pin DPAK Rail - Rail/Tube (Alt: NJVMJD45H11G)
    RoHS: Compliant
    Min Qty: 1275
    Container: Tube
    Americas - 0
    • 12750:$0.3049
    • 6375:$0.3129
    • 3825:$0.3169
    • 2550:$0.3209
    • 1275:$0.3229
    NJVMJD45H11G
    DISTI # 863-NJVMJD45H11G
    ON SemiconductorBipolar Transistors - BJT BIP DPAK PNP 8A 80V
    RoHS: Compliant
    965
    • 1:$0.9300
    • 10:$0.7680
    • 100:$0.4950
    • 1000:$0.3960
    • 2500:$0.3350
    • 10000:$0.3220
    • 25000:$0.3100
    NJVMJD45H11GON Semiconductor80V,8A,PNP Bipolar Power Transistor45
    • 1:$0.6400
    • 100:$0.4800
    • 500:$0.4200
    • 1000:$0.3900
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    OMO.#: OMO-LM4050QAEM3-2-0-NOPB

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    Mfr.#: HCPL-316J-000E

    OMO.#: OMO-HCPL-316J-000E-BROADCOM

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    Mfr.#: STPS2H100ZF

    OMO.#: OMO-STPS2H100ZF-STMICROELECTRONICS

    DIODE SCHOTTKY 100V 2A SOD123F
    RN73H1JTTD7871B25

    Mfr.#: RN73H1JTTD7871B25

    OMO.#: OMO-RN73H1JTTD7871B25-1092

    Thin Film Resistors - SMD 7.87kOhm,0603,0.1%,2 5ppm,100mW,75V
    TNPW060324K0BEEA

    Mfr.#: TNPW060324K0BEEA

    OMO.#: OMO-TNPW060324K0BEEA-VISHAY-DALE

    Thin Film Resistors - SMD 24Kohms .1% 25ppm
    72454-014LF

    Mfr.#: 72454-014LF

    OMO.#: OMO-72454-014LF-AMPHENOL-ICC

    Headers & Wire Housings CONNECTOR, BERGSTIK II/S
    Disponibilidad
    Valores:
    262
    En orden:
    2245
    Ingrese la cantidad:
    El precio actual de NJVMJD45H11G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,93 US$
    0,93 US$
    10
    0,77 US$
    7,68 US$
    100
    0,50 US$
    49,50 US$
    1000
    0,40 US$
    396,00 US$
    2500
    0,34 US$
    837,50 US$
    10000
    0,32 US$
    3 220,00 US$
    25000
    0,31 US$
    7 750,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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