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IPD65R1K0CEAUMA1

IPD65R1K0CEAUMA1
Mfr. #:
IPD65R1K0CEAUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 650V TO-252
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD65R1K0CEAUMA1 Ficha de datos
Entrega:
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Más información:
IPD65R1K0CEAUMA1 más información
Atributo del producto
Valor de atributo
Tags
IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPD65R1K0CEAUMA1
DISTI # 32383709		Infineon Technologies AGTrans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.2442
IPD65R1K0CEAUMA1
DISTI # IPD65R1K0CEAUMA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2969
IPD65R1K0CEAUMA1
DISTI # IPD65R1K0CEAUMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R1K0CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2469
  • 15000:$0.2519
  • 10000:$0.2609
  • 5000:$0.2699
  • 2500:$0.2799
IPD65R1K0CEAUMA1
DISTI # SP001421368		Infineon Technologies AGTrans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R (Alt: SP001421368)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2319
  • 15000:€0.2489
  • 10000:€0.2699
  • 5000:€0.2949
  • 2500:€0.3599
IPD65R1K0CEAUMA1
DISTI # 34AC1685		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes277
  • 1000:$0.3150
  • 500:$0.3410
  • 250:$0.3680
  • 100:$0.3940
  • 50:$0.4660
  • 25:$0.5390
  • 10:$0.6110
  • 1:$0.7270
IPD65R1K0CEAUMA1
DISTI # 726-IPD65R1K0CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		0
  • 1:$0.7200
  • 10:$0.6050
  • 100:$0.3900
  • 1000:$0.3120
IPD65R1K0CEAUMA1
DISTI # 2781174		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252
RoHS: Compliant		277
  • 100:$0.6010
  • 25:$0.7370
  • 5:$0.8460
IPD65R1K0CEAUMA1
DISTI # 2781174		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252247
  • 100:£0.3730
  • 10:£0.6360
  • 1:£0.7880
Imagen Parte # Descripción
IPD65R1K4CFD

Mfr.#: IPD65R1K4CFD

OMO.#: OMO-IPD65R1K4CFD

 MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K4CFDBTMA1

Mfr.#: IPD65R1K4CFDBTMA1

OMO.#: OMO-IPD65R1K4CFDBTMA1

 MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K0CEAUMA1

Mfr.#: IPD65R1K0CEAUMA1

OMO.#: OMO-IPD65R1K0CEAUMA1

 MOSFET CONSUMER
IPD65R1K4CFDATMA2

Mfr.#: IPD65R1K4CFDATMA2

OMO.#: OMO-IPD65R1K4CFDATMA2

 MOSFET
IPD65R1K4CFDATMA1

Mfr.#: IPD65R1K4CFDATMA1

OMO.#: OMO-IPD65R1K4CFDATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 2.8A TO-252
IPD65R1K5CEAUMA1

Mfr.#: IPD65R1K5CEAUMA1

OMO.#: OMO-IPD65R1K5CEAUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 700V 5.2A TO252-3
IPD65R1K0CEAUMA1

Mfr.#: IPD65R1K0CEAUMA1

OMO.#: OMO-IPD65R1K0CEAUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V TO-252
IPD65R1K4C6

Mfr.#: IPD65R1K4C6

OMO.#: OMO-IPD65R1K4C6-1190

 MOSFET N-Ch 700V 3.2A DPAK-2
IPD65R1K4CFD

Mfr.#: IPD65R1K4CFD

OMO.#: OMO-IPD65R1K4CFD-1190

 MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K4CFDBTMA1

Mfr.#: IPD65R1K4CFDBTMA1

OMO.#: OMO-IPD65R1K4CFDBTMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IPD65R1K0CEAUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,37 US$
0,37 US$
10
0,35 US$
3,48 US$
100
0,33 US$
32,97 US$
500
0,31 US$
155,70 US$
1000
0,29 US$
293,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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