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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI9407AEY-T1-E3 DISTI # 70026076 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.12Ohm,ID +/-3.5A,SO-8,PD 3W,VGS +/-20V,gF RoHS: Compliant | 0 |
|
| SI9407AEY-T1-E3 DISTI # 781-SI9407AEY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI9407BDY-T1-GE3 RoHS: Compliant | 0 | |
| SI9407AEYT1E3 | Vishay Intertechnologies | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 1870 | |
| SI9407AEY-T1-E3 DISTI # 1470138 | Vishay Intertechnologies | MOSFET, P, SO-8 RoHS: Compliant | 0 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI9407ADY-T1-E3/SI9407AP |
Nuevo y original |
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Mfr.#: SI9407AEY OMO.#: OMO-SI9407AEY-1190 |
MOSFET 60V 3.5A 3W |
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Mfr.#: SI9407AEY-T1-E3 OMO.#: OMO-SI9407AEY-T1-E3-1190 |
MOSFET, Power, P-Ch, VDSS -60V, RDS(ON) 0.12Ohm, ID +/-3.5A, SO-8, PD 3W, VGS +/-20V, gF |
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Mfr.#: SI9407AEYT1E3 OMO.#: OMO-SI9407AEYT1E3-1190 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: SI9407BDY-T1-GE3 GE3 |
Nuevo y original |
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Mfr.#: SI9407BEY-T1-GE3 OMO.#: OMO-SI9407BEY-T1-GE3-1190 |
Nuevo y original |
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Mfr.#: SI9407DY OMO.#: OMO-SI9407DY-1190 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI9407DY-T1 OMO.#: OMO-SI9407DY-T1-1190 |
Nuevo y original |
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Mfr.#: SI9407DY-TI OMO.#: OMO-SI9407DY-TI-1190 |
Nuevo y original |
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Mfr.#: SI9407EY-T1-E3 OMO.#: OMO-SI9407EY-T1-E3-1190 |
Nuevo y original |