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IHW30N65R5XKSA1

IHW30N65R5XKSA1
Mfr. #:
IHW30N65R5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IHW30N65R5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
Tecnología:
Si
Paquete / Caja:
TO-247-3
Serie:
TRENCHSTOP 5 RC-H
Embalaje:
Tubo
Marca:
Infineon Technologies
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IHW30N65R5 SP001273470
Tags
IHW30N6, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube
***et
Transistor IGBT Chip N-Channel 650V 60A 3-Pin TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***an P&S
650V,60A,Reverse Conducting IGBT
***i-Key
IGBT TRENCH 650V 60A TO247-3
***ronik
IGBT 650V 30A 1,35V TO247-3
***ark
Igbt, Single, 650V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:176W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:176W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.35V; Dissipazione di Potenza Pd:176W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
Parte # Mfg. Descripción Valores Precio
IHW30N65R5XKSA1
DISTI # 33959970		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube238
  • 7:$1.5876
IHW30N65R5XKSA1
DISTI # IHW30N65R5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 60A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		267In Stock
  • 2640:$1.8831
  • 720:$2.3445
  • 240:$2.7541
  • 25:$3.1776
  • 10:$3.3610
  • 1:$3.7400
IHW30N65R5XKSA1
DISTI # V36:1790_06377019		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.5670
  • 120000:$1.5690
  • 24000:$1.7510
  • 2400:$2.0590
  • 240:$2.1100
IHW30N65R5XKSA1
DISTI # SP001273470		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: SP001273470)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 200
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 10:€1.5900
  • 25:€1.5900
  • 1:€1.6900
IHW30N65R5XKSA1
DISTI # IHW30N65R5		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: IHW30N65R5)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 1200
  • 480:$0.6540
  • 240:$0.6546
IHW30N65R5XKSA1
DISTI # IHW30N65R5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Bulk (Alt: IHW30N65R5XKSA1)
Min Qty: 216
Container: Bulk		Americas - 0
  • 2160:$1.3900
  • 648:$1.4900
  • 1080:$1.4900
  • 216:$1.5900
  • 432:$1.5900
IHW30N65R5XKSA1
DISTI # IHW30N65R5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW30N65R5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.6900
  • 2400:$1.6900
  • 480:$1.7900
  • 960:$1.7900
  • 240:$1.8900
IHW30N65R5XKSA1
DISTI # 726-IHW30N65R5XKSA1		Infineon Technologies AGIGBT Transistors Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC466
  • 1:$3.5600
  • 10:$3.0200
  • 100:$2.6200
  • 250:$2.4800
  • 500:$2.2300
IHW30N65R5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
RoHS: Compliant		60
  • 1000:$1.5300
  • 500:$1.6100
  • 100:$1.6700
  • 25:$1.7400
  • 1:$1.8800
IHW30N65R5XKSA1
DISTI # IHW30N65R5		Infineon Technologies AGTransistor: IGBT,650V,30A,88W,TO247-347
  • 30:$2.1200
  • 10:$2.3500
  • 3:$2.6600
  • 1:$2.9600
IHW30N65R5XKSA1
DISTI # 2781026		Infineon Technologies AGIGBT, SINGLE, 650V, 60A, TO-2470
  • 500:£1.7000
  • 250:£1.9000
  • 100:£2.0000
  • 10:£2.3100
  • 1:£3.0500
IHW30N65R5XKSA1
DISTI # 2781026		Infineon Technologies AGIGBT, SINGLE, 650V, 60A, TO-247
RoHS: Compliant		0
  • 1000:$2.8400
  • 500:$2.9900
  • 250:$3.1500
  • 100:$3.3300
  • 10:$3.7600
  • 1:$4.0300
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Disponibilidad
Valores:
466
En orden:
2449
Ingrese la cantidad:
El precio actual de IHW30N65R5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,56 US$
3,56 US$
10
3,02 US$
30,20 US$
100
2,62 US$
262,00 US$
250
2,48 US$
620,00 US$
500
2,23 US$
1 115,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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