NSBC123JPDXV6T5G

NSBC123JPDXV6T5G
Mfr. #:
NSBC123JPDXV6T5G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBC123JPDXV6T5G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC123JPDXV6T5G DatasheetNSBC123JPDXV6T5G Datasheet (P4-P6)NSBC123JPDXV6T5G Datasheet (P7-P9)NSBC123JPDXV6T5G Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
PNP
Resistencia de entrada típica:
2.2 kOhms
Relación de resistencia típica:
0.047
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
80, 140
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
DTC123JP
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
80
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
8000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBC123JPDX, NSBC123JP, NSBC123J, NSBC123, NSBC12, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/2.2Kohm, Sot963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC123JPDXV6T5G
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi EMD4DXV6T1G
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
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***Yang
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R - Product that comes on tape, but is not reeled (A
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
***ment14 APAC
Transistor, AEC-Q101, DUAL NPN, 50V, SOT-563; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous
***nell
TRANS, AEC-Q101, DUAL NPN, 50V, SOT-563; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***enic
1 PCS NPN1 PCS PNP - Pre-Biased(Dual) 500mW 100mA 50V SOT-563 Digital Transistors ROHS
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6
***ure Electronics
NSBC114 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-563
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC114YPDXV6T1G
***nell
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 4.7(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
Parte # Mfg. Descripción Valores Precio
NSBC123JPDXV6T5G
DISTI # NSBC123JPDXV6T5GOSTR-ND
ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0696
NSBC123JPDXV6T5G
DISTI # 42K2340
ON SemiconductorBRT TRANSISTOR, 50V, 47K/2.2KOHM, SOT963,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.047(Ratio) RoHS Compliant: Yes0
  • 1:$0.0740
NSBC123JPDXV6T1G
DISTI # 863-NSBC123JPDXV6T1G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
RoHS: Compliant
5817
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 4000:$0.0930
  • 8000:$0.0870
NSBC123JPDXV6T5G
DISTI # 863-NSBC123JPDXV6T5G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
RoHS: Compliant
0
  • 1:$0.4200
  • 10:$0.2660
  • 100:$0.1140
  • 1000:$0.0880
  • 2500:$0.0670
  • 8000:$0.0590
  • 24000:$0.0560
  • 48000:$0.0490
  • 96000:$0.0480
NSBC123JPDXV6T5GON Semiconductor 
RoHS: Not Compliant
311912
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBC123JPDXV6T5GON Semiconductor 8385
    Imagen Parte # Descripción
    NSBC123JPDP6T5G

    Mfr.#: NSBC123JPDP6T5G

    OMO.#: OMO-NSBC123JPDP6T5G

    Bipolar Transistors - Pre-Biased BRT COMPLEMENTARY
    NSBC123JPDXV6T1G

    Mfr.#: NSBC123JPDXV6T1G

    OMO.#: OMO-NSBC123JPDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
    NSBC123JDXV6T1G

    Mfr.#: NSBC123JDXV6T1G

    OMO.#: OMO-NSBC123JDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
    NSBC123JPDXV6T5G

    Mfr.#: NSBC123JPDXV6T5G

    OMO.#: OMO-NSBC123JPDXV6T5G

    Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
    NSBC123JDXV6T5

    Mfr.#: NSBC123JDXV6T5

    OMO.#: OMO-NSBC123JDXV6T5-ON-SEMICONDUCTOR

    TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123JDXV6T5G

    Mfr.#: NSBC123JDXV6T5G

    OMO.#: OMO-NSBC123JDXV6T5G-1190

    TRANS PREBIAS DUAL NPN SOT563
    NSBC123JPDXV6T1

    Mfr.#: NSBC123JPDXV6T1

    OMO.#: OMO-NSBC123JPDXV6T1-ON-SEMICONDUCTOR

    TRANS PREBIAS NPN/PNP SOT563
    NSBC123JPDP6T5G

    Mfr.#: NSBC123JPDP6T5G

    OMO.#: OMO-NSBC123JPDP6T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased BRT COMPLEMENTARY
    NSBC123JDP6T5G

    Mfr.#: NSBC123JDP6T5G

    OMO.#: OMO-NSBC123JDP6T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased DUAL NBRT
    NSBC123JPDXV6T1G

    Mfr.#: NSBC123JPDXV6T1G

    OMO.#: OMO-NSBC123JPDXV6T1G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de NSBC123JPDXV6T5G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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