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FFSP08120A

FFSP08120A
Mfr. #:
FFSP08120A
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Schottky Diodes & Rectifiers 1200V SiC SBD 8A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FFSP08120A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FFSP08120A más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-2L
Si - Corriente directa:
8 A
Vrrm - Voltaje inverso repetitivo:
1.2 kV
Vf - Voltaje directo:
1.45 V
Ifsm - Corriente de sobretensión directa:
68 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
200 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FFSP08120A
Embalaje:
Tubo
Marca:
ON Semiconductor / Fairchild
Pd - Disipación de energía:
166 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
800
Subcategoría:
Diodes & Rectifiers
Vr - Voltaje inverso:
1.2 kV
Unidad de peso:
0.076192 oz
Tags
FFSP0, FFSP, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon Carbide, TO-220AC
***Yang
Silicon Carbide Schottky Diode 1200 V 8 A 2-Pin TO-220 Through Hole - Rail/Tube
***ical
Rectifier Diode Schottky 1.2KV 8A 2-Pin(2+Tab) TO-220 Tube
***emi
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, TO-220-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, TO-220-2L
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSP SiC Schottky Diodes
ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Parte # Mfg. Descripción Valores Precio
FFSP08120A
DISTI # 27170812		ON SemiconductorSilicon Carbide Schottky Diode800
  • 1600:$2.9177
  • 800:$3.0189
FFSP08120A
DISTI # FFSP08120AOS-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV 8A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		749In Stock
  • 3200:$2.5718
  • 800:$3.0494
  • 100:$3.5822
  • 25:$4.1332
  • 10:$4.3720
  • 1:$4.8700
FFSP08120A
DISTI # V36:1790_17093687		ON SemiconductorSilicon Carbide Schottky Diode0
    FFSP08120A
    DISTI # FFSP08120A    		ON SemiconductorSilicon Carbide Schottky Diode 1200 V 8 A 2-Pin TO-220 Through Hole - Rail/Tube (Alt: FFSP08120A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Americas - 0
    • 8000:$2.7900
    • 1600:$2.8900
    • 3200:$2.8900
    • 4800:$2.8900
    • 800:$2.9900
    FFSP08120A
    DISTI # 512-FFSP08120A    		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 8A
    RoHS: Compliant    		672
    • 1:$4.8700
    • 10:$4.1400
    • 100:$3.5900
    • 250:$3.4000
    • 500:$3.0500
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    STP10LN80K5

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    		 MOSFET N-CH 800V 8A TO-220
    NTR3A052PZT1G

    Mfr.#: NTR3A052PZT1G

    OMO.#: OMO-NTR3A052PZT1G-ON-SEMICONDUCTOR

    		 MOSFET P-CH 20V 3.6A SOT23
    BM71BLES1FC2-0B02AA

    Mfr.#: BM71BLES1FC2-0B02AA

    OMO.#: OMO-BM71BLES1FC2-0B02AA-MICROCHIP-TECHNOLOGY

    		 BLUETOOTH 4.2 BLE MODULE
    STP23N80K5

    Mfr.#: STP23N80K5

    OMO.#: OMO-STP23N80K5-STMICROELECTRONICS

    		 MOSFET N-CH 800V 16A
    LVM12FTR020E-TR

    Mfr.#: LVM12FTR020E-TR

    OMO.#: OMO-LVM12FTR020E-TR-OHMITE

    		 RES 0.02 OHM 1% 1/2W 1206
    Disponibilidad
    Valores:
    662
    En orden:
    2645
    Ingrese la cantidad:
    El precio actual de FFSP08120A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,08 US$
    6,08 US$
    10
    5,17 US$
    51,70 US$
    100
    4,48 US$
    448,00 US$
    250
    4,25 US$
    1 062,50 US$
    500
    3,81 US$
    1 905,00 US$
    1000
    3,29 US$
    3 290,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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