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FDN357N

FDN357N
Mfr. #:
FDN357N
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 30V 1.9A SSOT3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDN357N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
-
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
FDN357N_NL
Unidad de peso
0.001058 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SuperSOT-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
460mW
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
235pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
1.9A (Ta)
Rds-On-Max-Id-Vgs
60 mOhm @ 2.2A, 10V
Vgs-th-Max-Id
2V @ 250μA
Puerta-Carga-Qg-Vgs
5.9nC @ 5V
Disipación de potencia Pd
500 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
1.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
81 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
12 ns
Tiempo de retardo de encendido típico
5 ns
Transconductancia directa-Mín.
5 S
Modo de canal
Mejora
Tags
FDN357N, FDN357, FDN35, FDN3, FDN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN357N
***Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
***ical
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor
***p One Stop Japan
Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R
***ark
30V N-Fet 60 Mo Ssot3 Rohs Compliant: Yes
*** Source Electronics
MOSFET N-CH 30V 1.9A SSOT3
***trelec
MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW
***eco
FDN357N,003, PLASTIC MOLDED, S
***ser
MOSFETs SSOT-3 N-CH 30V
***et
30V N-CH. FET, 60 MO, SSOT3
***nell
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.08ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:357; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:3.05mm; Width, Tape:8mm
***rchild Semiconductor
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
FDN357N
DISTI # V72:2272_06300784		ON Semiconductor30V N-CH. FET, 60 MO, SSOT3121
  • 100:$0.1656
  • 25:$0.3474
  • 10:$0.3528
  • 1:$0.4966
FDN357N
DISTI # FDN357NCT-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25169In Stock
  • 1000:$0.1707
  • 500:$0.2276
  • 100:$0.3319
  • 10:$0.4840
  • 1:$0.6200
FDN357N
DISTI # FDN357NDKR-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25169In Stock
  • 1000:$0.1707
  • 500:$0.2276
  • 100:$0.3319
  • 10:$0.4840
  • 1:$0.6200
FDN357N
DISTI # FDN357NTR-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.1519
FDN357N
DISTI # 30275702		ON Semiconductor30V N-CH. FET, 60 MO, SSOT3121
  • 100:$0.1656
  • 62:$0.3474
FDN357N
DISTI # FDN357N		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN357N)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0849
  • 6000:$0.0839
  • 12000:$0.0829
  • 18000:$0.0819
  • 30000:$0.0799
FDN357N
DISTI # FDN357N		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    FDN357N
    DISTI # FDN357N    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.1439
    • 6000:€0.1119
    • 12000:€0.0909
    • 18000:€0.0769
    • 30000:€0.0719
    FDN357N
    DISTI # FDN357N    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN357N)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 0
    • 1:$0.3559
    • 30:$0.3119
    • 75:$0.2199
    • 150:$0.1689
    • 375:$0.1599
    • 750:$0.1579
    • 1500:$0.1579
    FDN357N
    DISTI # 67R2063    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: 67R2063)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.1260
    • 12000:$0.1220
    • 18000:$0.1170
    • 30000:$0.1120
    FDN357N
    DISTI # 58K8842    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8842)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.5390
    • 25:$0.4080
    • 50:$0.3150
    • 100:$0.2210
    • 250:$0.2020
    • 500:$0.1850
    • 1000:$0.1660
    FDN357N
    DISTI # 58K8842    		ON SemiconductorN CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes4802
    • 1:$0.5390
    • 25:$0.4080
    • 50:$0.3150
    • 100:$0.2210
    • 250:$0.2020
    • 500:$0.1850
    • 1000:$0.1660
    FDN357N
    DISTI # 04X6265    		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes54000
    • 1:$0.1760
    • 3000:$0.1660
    • 6000:$0.1440
    • 12000:$0.1290
    • 18000:$0.1180
    • 30000:$0.1080
    FDN357NON SemiconductorN-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor
    RoHS: Compliant    		3000Reel
    • 3000:$0.1120
    • 6000:$0.1060
    • 9000:$0.1050
    FDN357NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		416409
    • 1000:$0.1600
    • 100:$0.1700
    • 500:$0.1700
    • 25:$0.1800
    • 1:$0.1900
    FDN357N
    DISTI # 512-FDN357N    		ON SemiconductorMOSFET SSOT-3 N-CH 30V
    RoHS: Compliant    		4010
    • 1:$0.4900
    • 10:$0.3710
    • 100:$0.2010
    • 1000:$0.1510
    • 3000:$0.1300
    • 9000:$0.1220
    • 24000:$0.1120
    FDN357N_Q
    DISTI # 512-FDN357N_Q    		ON SemiconductorMOSFET SSOT-3 N-CH 30V
    RoHS: Not compliant    		0
      FDN357NFairchild Semiconductor Corporation 1065
        FDN357NFairchild Semiconductor Corporation 14998
          FDN357NFairchild Semiconductor Corporation 4198
            FDN357N
            DISTI # 6710441            		ON SemiconductorMOSFET N-CHANNEL 30V 1.9A SUPERSOT3, PK315
            • 5:£0.5200
            • 25:£0.2620
            • 100:£0.1420
            • 250:£0.1300
            • 500:£0.1200
            FDN357N
            DISTI # 6710441P            		ON SemiconductorMOSFET N-CHANNEL 30V 1.9A SUPERSOT3, RL1370
            • 25:£0.2620
            • 100:£0.1420
            • 250:£0.1300
            • 500:£0.1200
            FDN357NFairchild Semiconductor Corporation1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET3005
            • 1264:$0.1232
            • 254:$0.1584
            • 1:$0.3520
            FDN357NON SemiconductorN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SUPERSOT-3
            RoHS: Compliant            		Europe - 3000
              FDN357NFairchild Semiconductor CorporationINSTOCK3000
                FDN357N INSTOCK320
                  FDN357N
                  DISTI # 2323189                  		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT
                  RoHS: Compliant                  		54000
                  • 3000:£0.1110
                  • 9000:£0.0954
                  FDN357N
                  DISTI # 9845364                  		ON SemiconductorMOSFET, N, SOT-23
                  RoHS: Compliant                  		26214
                  • 1:$0.7750
                  • 10:$0.5870
                  • 100:$0.3190
                  • 1000:$0.2400
                  • 3000:$0.2060
                  • 9000:$0.1940
                  • 24000:$0.1780
                  FDN357N
                  DISTI # 2323189                  		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT
                  RoHS: Compliant                  		66000
                  • 3000:$0.2060
                  FDN357N
                  DISTI # 1562548                  		ON SemiconductorMOSFET, N SOT-23 REEL 3K
                  RoHS: Compliant                  		0
                  • 1:$748.6700
                  • 3:$741.1000
                  FDN357N
                  DISTI # 9845364RL                  		ON SemiconductorMOSFET, N, SOT-23
                  RoHS: Compliant                  		0
                  • 1:$0.7750
                  • 10:$0.5870
                  • 100:$0.3190
                  • 1000:$0.2400
                  • 3000:$0.2060
                  • 9000:$0.1940
                  • 24000:$0.1780
                  FDN357N
                  DISTI # XSFP00000026676                  		Fairchild Semiconductor Corporation 
                  RoHS: Compliant                  		16152
                  • 3000:$0.1880
                  • 16152:$0.1762
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                  		 Nuevo y original
                  Disponibilidad
                  Valores:
                  Available
                  En orden:
                  2500
                  Ingrese la cantidad:
                  El precio actual de FDN357N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                  Precio de referencia (USD)
                  Cantidad
                  Precio unitario
                  Ext. Precio
                  1
                  0,12 US$
                  0,12 US$
                  10
                  0,11 US$
                  1,13 US$
                  100
                  0,11 US$
                  10,68 US$
                  500
                  0,10 US$
                  50,45 US$
                  1000
                  0,09 US$
                  94,90 US$
                  Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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