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IPD65R190C7

IPD65R190C7
Mfr. #:
IPD65R190C7
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD65R190C7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD65R190C7 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
190 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
23 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
72 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
54 ns
Tiempo típico de retardo de encendido:
11 ns
Parte # Alias:
IPD65R190C7ATMA1 SP000928648
Unidad de peso:
0.028219 oz
Tags
IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPD65R190C7
DISTI # 33625514		Infineon Technologies AG02500
  • 7:$4.1125
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2475In Stock
  • 1000:$1.4664
  • 500:$1.7698
  • 100:$2.1541
  • 10:$2.6800
  • 1:$2.9800
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2475In Stock
  • 1000:$1.4664
  • 500:$1.7698
  • 100:$2.1541
  • 10:$2.6800
  • 1:$2.9800
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.2764
  • 2500:$1.3255
IPD65R190C7ATMA1
DISTI # V72:2272_06377199		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD65R190C7ATMA1
    DISTI # V36:1790_06377199    		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
    • 2500000:$1.3070
    • 1250000:$1.3090
    • 250000:$1.3970
    • 25000:$1.5270
    • 2500:$1.5480
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD65R190C7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 15000:$1.1900
    • 2500:$1.2900
    IPD65R190C7ATMA1
    DISTI # SP000928648    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R (Alt: SP000928648)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€1.0379
    • 15000:€1.1119
    • 10000:€1.1979
    • 5000:€1.2969
    • 2500:€1.5569
    IPD65R190C7ATMA1
    DISTI # 54X5226    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes5000
    • 1000:$1.3600
    • 500:$1.6500
    • 100:$1.8900
    • 10:$2.3500
    • 1:$2.7800
    IPD65R190C7ATMA1
    DISTI # 726-IPD65R190C7ATMA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7
    DISTI # 726-IPD65R190C7    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-3
    RoHS: Compliant    		5000
    • 2500:$1.9900
    • 1000:$2.0300
    • 500:$2.4600
    • 100:$2.8200
    • 10:$3.5100
    • 1:$4.1400
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-34900
    • 100:£1.7900
    • 10:£2.2300
    • 1:£2.9900
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de IPD65R190C7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,75 US$
    2,75 US$
    10
    2,33 US$
    23,30 US$
    100
    1,87 US$
    187,00 US$
    500
    1,63 US$
    815,00 US$
    1000
    1,35 US$
    1 350,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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