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IPW65R150CFDFKSA1

IPW65R150CFDFKSA1
Mfr. #:
IPW65R150CFDFKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 700V 22.4A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R150CFDFKSA1 Ficha de datos
Entrega:
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Más información:
IPW65R150CFDFKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPW65R150
embalaje
Tubo
Alias ​​de parte
IPW65R150CFD IPW65R150CFDXK SP000907038
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
195.3 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5.6 ns
Hora de levantarse
7.6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
22.4 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
135 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
86 nC
Tags
IPW65R15, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Global
Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 650V 22.4A 3-Pin TO-247 Tube
***ical
650V Power Transistor
***ronik
N-CH 650V 22,4A 150mOhm TO247
***i-Key
HIGH POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 22.4A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:195.3W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 22,4A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:22.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.135ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:195.3W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is 's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPW65R150CFDFKSA1
DISTI # V99:2348_06378021		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 100:$2.6620
  • 10:$3.1509
  • 1:$3.6080
IPW65R150CFDFKSA1
DISTI # IPW65R150CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1200In Stock
  • 1200:$2.6056
  • 720:$3.0363
  • 240:$3.6824
  • 10:$4.4280
  • 1:$4.9300
IPW65R150CFDFKSA1
DISTI # 31057467		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 100:$2.6620
  • 10:$3.1509
  • 4:$3.6080
IPW65R150CFDFKSA1
DISTI # 31237331		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 30:$1.8882
IPW65R150CFDFKSA1
DISTI # SP000907038		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Alt: SP000907038)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1:€2.1900
  • 10:€1.9900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.5900
IPW65R150CFDFKSA1
DISTI # IPW65R150CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R150CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.0900
  • 480:$1.9900
  • 960:$1.9900
  • 1440:$1.8900
  • 2400:$1.8900
IPW65R150CFDFKSA1
DISTI # IPW65R150CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Alt: IPW65R150CFD)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R150CFDFKSA1
    DISTI # 13AC9101    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes0
    • 1:$4.8300
    • 10:$4.1600
    • 25:$3.9900
    • 50:$3.8300
    • 100:$3.6600
    IPW65R150CFD
    DISTI # 726-IPW65R150CFD    		Infineon Technologies AGMOSFET N-Ch 700V 22.4A TO247-3
    RoHS: Compliant    		1129
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    IPW65R150CFDFKSA1
    DISTI # 726-IPW65R150CFDFKSA    		Infineon Technologies AGMOSFET N-Ch 700V 22.4A TO247-3
    RoHS: Compliant    		441
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    IPW65R150CFDFKSA1
    DISTI # 2726082    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3
    RoHS: Compliant    		0
    • 1:$4.5500
    • 10:$4.2600
    • 100:$3.7700
    IPW65R150CFDFKSA1
    DISTI # C1S322000339363    		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		240
    • 240:$3.2200
    IPW65R150CFDFKSA1
    DISTI # 2726082    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3
    RoHS: Compliant    		240
    • 1:£3.4100
    • 10:£2.5900
    • 100:£2.2500
    • 250:£2.1800
    • 500:£2.1000
    Imagen Parte # Descripción
    IPW65R150CFD

    Mfr.#: IPW65R150CFD

    OMO.#: OMO-IPW65R150CFD

    		 MOSFET N-Ch 700V 22.4A TO247-3
    IPW65R150CFDFKSA1

    Mfr.#: IPW65R150CFDFKSA1

    OMO.#: OMO-IPW65R150CFDFKSA1

    		 MOSFET N-Ch 700V 22.4A TO247-3
    IPW65R150CFDAFKSA1

    Mfr.#: IPW65R150CFDAFKSA1

    OMO.#: OMO-IPW65R150CFDAFKSA1

    		 MOSFET N-Ch 650V 22.4A TO247-3
    IPW65R150CFDFKSA2

    Mfr.#: IPW65R150CFDFKSA2

    OMO.#: OMO-IPW65R150CFDFKSA2

    		 MOSFET
    IPW65R150CFDFKSA2

    Mfr.#: IPW65R150CFDFKSA2

    OMO.#: OMO-IPW65R150CFDFKSA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPW65R150CFD

    Mfr.#: IPW65R150CFD

    OMO.#: OMO-IPW65R150CFD-1190

    		 MOSFET N-Ch 700V 22.4A TO247-3
    IPW65R150CFDA

    Mfr.#: IPW65R150CFDA

    OMO.#: OMO-IPW65R150CFDA-1190

    		 Nuevo y original
    IPW65R150CFDAFKSA1

    Mfr.#: IPW65R150CFDAFKSA1

    OMO.#: OMO-IPW65R150CFDAFKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V TO247
    IPW65R150CFDFKSA1

    Mfr.#: IPW65R150CFDFKSA1

    OMO.#: OMO-IPW65R150CFDFKSA1-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET N-Ch 700V 22.4A TO247-3
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de IPW65R150CFDFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,71 US$
    2,71 US$
    10
    2,57 US$
    25,75 US$
    100
    2,44 US$
    243,92 US$
    500
    2,30 US$
    1 151,85 US$
    1000
    2,17 US$
    2 168,20 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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