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FCB20N60FTM

FCB20N60FTM
Mfr. #:
FCB20N60FTM
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V NCH FRFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCB20N60FTM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
150 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
208 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
FCB20N60F
Tipo de transistor:
1 N-Channel
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
17 S
Otoño:
65 ns
Tipo de producto:
MOSFET
Hora de levantarse:
140 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
230 ns
Tiempo típico de retardo de encendido:
62 ns
Unidad de peso:
0.046296 oz
Tags
FCB20N60F, FCB20N, FCB20, FCB2, FCB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***Components
MOSFET N-Channel 600V 20A SuperFET D2PAK
***ure Electronics
FCB20N60F Series 600 V 0.19 Ohms Surface Mount N-Channel FRFET D2-PAK-3
***i-Key
MOSFET N-CH 600V 20A D2PAK
***ser
MOSFETs 600V, NCH, FRFET
***inecomponents.com
600V N-CHANNEL FRFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
***th Star Micro
SuperFET is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
***nell
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Parte # Mfg. Descripción Valores Precio
FCB20N60FTM
DISTI # V72:2272_06337697		ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 1:$4.4847
FCB20N60FTM
DISTI # V36:1790_06337697		ON Semiconductor600V, NCH, FRFET0
  • 800000:$1.8710
  • 400000:$1.8740
  • 80000:$2.1480
  • 8000:$2.6300
  • 800:$2.7100
FCB20N60FTM
DISTI # FCB20N60FTMCT-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMDKR-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMTR-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.7416
  • 2400:$1.8096
  • 1600:$1.9048
  • 800:$2.2586
FCB20N60FTM
DISTI # 33079212		ON Semiconductor600V, NCH, FRFET800
  • 2400:$1.7960
  • 1600:$1.8858
  • 800:$2.2360
FCB20N60FTM
DISTI # 33599206		ON Semiconductor600V, NCH, FRFET800
  • 800:$2.2667
FCB20N60FTM
DISTI # 32681977		ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 4:$4.4847
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€1.4900
  • 4800:€1.5900
  • 3200:€1.6900
  • 800:€1.7900
  • 1600:€1.7900
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$2.1243
  • 20000:$2.1597
  • 8000:$2.2341
  • 4000:$2.3139
  • 2400:$2.3996
  • 1600:$2.4919
  • 800:$2.5916
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
FCB20N60FTM
DISTI # 20M1150		ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 4000:$1.9400
  • 2400:$2.1000
  • 1600:$2.1600
  • 1:$2.3300
  • 800:$2.3300
FCB20N60FTM
DISTI # 67P3446		ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 500:$2.6500
  • 250:$2.9400
  • 100:$3.0900
  • 50:$3.2500
  • 25:$3.4000
  • 10:$3.5600
  • 1:$4.1600
FCB20N60FTM
DISTI # 512-FCB20N60FTM		ON SemiconductorMOSFET 600V NCH FRFET
RoHS: Compliant		695
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 800:$1.8600
FCB20N60FTMFairchild Semiconductor Corporation 253
    FCB20N60FTM
    DISTI # XSFP00000073919    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1600 in Stock0 on Order
    • 1600:$2.1600
    • 800:$2.3100
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    Disponibilidad
    Valores:
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    En orden:
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