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FDD6688S

FDD6688S
Mfr. #:
FDD6688S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD6688S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
88 A
Rds On - Resistencia de la fuente de drenaje:
4 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
2.39 mm
Longitud:
6.73 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
88 S
Otoño:
64 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
31 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
FDD6688S_NL
Unidad de peso:
0.139332 oz
Tags
FDD6688, FDD668, FDD66, FDD6, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 30V 84A 3-Pin(2+Tab) TO-252AA T/R - Bulk
***i-Key
MOSFET N-CH 30V 88A D-PAK
***ser
MOSFETs 30V,N-CH,DPAK,POWER TRENCH SYNCFET
***el Nordic
Contact for details
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
***emi
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
***ment14 APAC
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Transistor,mosfet,n-Channel,30V V(Br)Dss,84A I(D),to-252Aa Rohs Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET, 30V, 84A, 5mΩ
***ure Electronics
Single N-Channel 30 V 10 mOhm 56 nC 83 W PowerTrench SMT Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***el Electronic
Transistors - IGBTs - Modules 1 (Unlimited) Half Bridge Module No Standard Chassis Mount 6.5V @ 15V, 150A 1mA -40°C~150°C TJ POWEREX CM150DU-24NFH IGBT MODULE, 1.2KV, 150A
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***et
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.001uF 50 volts 10%
***nell
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
***Yang
N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount D-PAK (TO-252AA) - Bulk
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***ter Electronics
30V/16V, 5/6MO, NCH, SINGLE, DPAK, 400A GOX, PTIII
***ark
; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
***el Electronic
Coaxial Connectors (RF) - Terminators Adapter, Jack to Plug Not Applicable BNC Free Hanging (In-Line) 75 Ω 2002 2 Weeks Brass Attenuators - Interconnects 75 OHM M/F ATTENUATR
***nell
MOSFET, N, SMD, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0057ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.5V; Power Dissipa
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, D-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, 30V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:89mW; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:8113; Current Id Max:94A; Package / Case:DPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
FDD6688S
DISTI # FDD6688S-ND		ON SemiconductorMOSFET N-CH 30V 88A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDD6688S
    DISTI # 512-FDD6688S    		ON SemiconductorMOSFET 30V N-CH DPAK POWER TRENCH SYNCFET
    RoHS: Compliant    		0
      FDD6688SFairchild Semiconductor CorporationPower Field-Effect Transistor, 88A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		6966
      • 1000:$1.2600
      • 500:$1.3300
      • 100:$1.3800
      • 25:$1.4400
      • 1:$1.5600
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      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de FDD6688S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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